JPS6464223A - Ion milling device - Google Patents

Ion milling device

Info

Publication number
JPS6464223A
JPS6464223A JP21918087A JP21918087A JPS6464223A JP S6464223 A JPS6464223 A JP S6464223A JP 21918087 A JP21918087 A JP 21918087A JP 21918087 A JP21918087 A JP 21918087A JP S6464223 A JPS6464223 A JP S6464223A
Authority
JP
Japan
Prior art keywords
ion beams
etching
substrate
ion
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21918087A
Other languages
Japanese (ja)
Other versions
JPH0691044B2 (en
Inventor
Masakatsu Saito
Katsuo Konishi
Shigeo Aoki
Seitaro Oishi
Makoto Morijiri
Tadashi Sato
Kenichi Natsui
Yasunori Ono
Yoshimi Hakamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21918087A priority Critical patent/JPH0691044B2/en
Publication of JPS6464223A publication Critical patent/JPS6464223A/en
Publication of JPH0691044B2 publication Critical patent/JPH0691044B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable processing, through which re-adhesion is removed completely, by mounting a second ion source capable of irradiating a substrate with ion beams at an angle separate from a first ion source besides the first ion source aiming at processing to a desired pattern. CONSTITUTION:First ion beams 5a etch and pattern a substrate 7, using a photo-resist 9 on the substrate 7 as a mask. Second ion beams 5b from a second ion source are applied from the re-adhesion surface side of an etching substance by first ion beams to the first ion beams 5a. A re-adhesion etching substance adhering on the wall surface of the photo-resist 9 or the etching wall surface of the substrate 7 again by the first ion beams 5a is removed through etching by the second ion beams 5b. Accordingly, no re-attachment is generated both on the side wall of the photo-resist and the side wall of an etching pattern, and no said re-adhesion etching substance is generated on the patterned substrate 7 after the photo-resist 9 is gotten rid of.
JP21918087A 1987-09-03 1987-09-03 Ion milling equipment Expired - Fee Related JPH0691044B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21918087A JPH0691044B2 (en) 1987-09-03 1987-09-03 Ion milling equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21918087A JPH0691044B2 (en) 1987-09-03 1987-09-03 Ion milling equipment

Publications (2)

Publication Number Publication Date
JPS6464223A true JPS6464223A (en) 1989-03-10
JPH0691044B2 JPH0691044B2 (en) 1994-11-14

Family

ID=16731452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21918087A Expired - Fee Related JPH0691044B2 (en) 1987-09-03 1987-09-03 Ion milling equipment

Country Status (1)

Country Link
JP (1) JPH0691044B2 (en)

Also Published As

Publication number Publication date
JPH0691044B2 (en) 1994-11-14

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees