JPS6463828A - Semiconductor temperature detecting circuit - Google Patents

Semiconductor temperature detecting circuit

Info

Publication number
JPS6463828A
JPS6463828A JP62220651A JP22065187A JPS6463828A JP S6463828 A JPS6463828 A JP S6463828A JP 62220651 A JP62220651 A JP 62220651A JP 22065187 A JP22065187 A JP 22065187A JP S6463828 A JPS6463828 A JP S6463828A
Authority
JP
Japan
Prior art keywords
collectors
source
terminal
guided
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62220651A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0569457B2 (enrdf_load_stackoverflow
Inventor
Tsutomu Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62220651A priority Critical patent/JPS6463828A/ja
Publication of JPS6463828A publication Critical patent/JPS6463828A/ja
Publication of JPH0569457B2 publication Critical patent/JPH0569457B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Amplifiers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Bipolar Transistors (AREA)
  • Control Of Electrical Variables (AREA)
JP62220651A 1987-09-02 1987-09-02 Semiconductor temperature detecting circuit Granted JPS6463828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62220651A JPS6463828A (en) 1987-09-02 1987-09-02 Semiconductor temperature detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62220651A JPS6463828A (en) 1987-09-02 1987-09-02 Semiconductor temperature detecting circuit

Publications (2)

Publication Number Publication Date
JPS6463828A true JPS6463828A (en) 1989-03-09
JPH0569457B2 JPH0569457B2 (enrdf_load_stackoverflow) 1993-10-01

Family

ID=16754309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220651A Granted JPS6463828A (en) 1987-09-02 1987-09-02 Semiconductor temperature detecting circuit

Country Status (1)

Country Link
JP (1) JPS6463828A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007102753A (ja) * 2005-09-07 2007-04-19 Renesas Technology Corp 基準電圧発生回路および半導体集積回路並びに半導体集積回路装置
JP2007279949A (ja) * 2006-04-05 2007-10-25 Toshiba Corp 基準電圧発生回路
US7507023B2 (en) 2005-04-15 2009-03-24 Fuji Electric Device Technology Co., Ltd. Temperature measurement device of power semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-&TATE CIRCUIT=1984 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7507023B2 (en) 2005-04-15 2009-03-24 Fuji Electric Device Technology Co., Ltd. Temperature measurement device of power semiconductor device
JP2007102753A (ja) * 2005-09-07 2007-04-19 Renesas Technology Corp 基準電圧発生回路および半導体集積回路並びに半導体集積回路装置
JP2007279949A (ja) * 2006-04-05 2007-10-25 Toshiba Corp 基準電圧発生回路

Also Published As

Publication number Publication date
JPH0569457B2 (enrdf_load_stackoverflow) 1993-10-01

Similar Documents

Publication Publication Date Title
EP0388000A3 (en) Process for forming vertical bipolar transistors and high-voltage cmos in a single integrated circuit chip
GB2173638B (en) Semiconductor devices
GB1462445A (en) Cmos amplifier with a bipolar transistor output stage
JPS6480063A (en) Npn bipolar transistor
EP0310047A3 (en) Double-diffused mos fet
JPS6463828A (en) Semiconductor temperature detecting circuit
US5168341A (en) Bipolar-cmos integrated circuit having a structure suitable for high integration
JPS57100743A (en) Semiconductor integrated circuit device
JPS6484744A (en) Bicmos integrated circuit
JPS57118663A (en) Manufacture of semiconductor integrated circuit device
JPS56108255A (en) Semiconductor integrated circuit
EP0347550A3 (en) Process for fabricating isolated vertical and super beta bipolar transistors
EP0240273A3 (en) Programmable transistors
JPS5615068A (en) Semiconductor device and manufacture thereof
JPS57132353A (en) Semiconductor integrated circuit
JPS6447064A (en) Semiconductor device
JPS6465922A (en) Semiconductor integrated circuit
JPS5297683A (en) Semiconductor circuit device
JPS5753152A (en) Inverter circuit
JPS56157055A (en) Output unit of semiconductor ic
JPS52106278A (en) Manufacture of bipolar cmos semiconductor device
JPS5563868A (en) Semiconductor integrated circuit
JPS5715456A (en) Semiconductor integrated circuit device
JPS57197835A (en) Semiconductor device
JPS5552240A (en) Semiconductor integrated circuit device

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

EXPY Cancellation because of completion of term