JPS6461064A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6461064A
JPS6461064A JP21940287A JP21940287A JPS6461064A JP S6461064 A JPS6461064 A JP S6461064A JP 21940287 A JP21940287 A JP 21940287A JP 21940287 A JP21940287 A JP 21940287A JP S6461064 A JPS6461064 A JP S6461064A
Authority
JP
Japan
Prior art keywords
layer
source
substrate
low concentration
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21940287A
Other languages
Japanese (ja)
Inventor
Yuji Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21940287A priority Critical patent/JPS6461064A/en
Publication of JPS6461064A publication Critical patent/JPS6461064A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To suppress the influence of a short channel effect and to reduce a source resistance by forming first and second low concentration layers using the same mask by ion implantation from oblique direction and perpendicular direction of the surface of a semi-insulating substrate. CONSTITUTION:A mask layer 3 and a mask layer 4 having a wider width than a gate length are formed on a GaAs substrate 1 having an active layer 2 on its surface. Then, impurity ions 5 are implanted from oblique direction to the surface of the substrate 1 to form the same conductivity type source, drain low concentration layers 6s, 6d as that of the layer 2. The layer 6s is formed to the section under the source of the layer 4 at this time. Then, impurity ions 7 are implanted perpendicularly to the surface of the substrate 1, and source, drain low concentration layers 8s, 8d having higher impurity concentration than those of the layers 6s, 6d are formed in the same conductivity type as that of the layer 2.
JP21940287A 1987-09-01 1987-09-01 Manufacture of semiconductor device Pending JPS6461064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21940287A JPS6461064A (en) 1987-09-01 1987-09-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21940287A JPS6461064A (en) 1987-09-01 1987-09-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6461064A true JPS6461064A (en) 1989-03-08

Family

ID=16734847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21940287A Pending JPS6461064A (en) 1987-09-01 1987-09-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6461064A (en)

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