JPS6461064A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6461064A JPS6461064A JP21940287A JP21940287A JPS6461064A JP S6461064 A JPS6461064 A JP S6461064A JP 21940287 A JP21940287 A JP 21940287A JP 21940287 A JP21940287 A JP 21940287A JP S6461064 A JPS6461064 A JP S6461064A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- source
- substrate
- low concentration
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To suppress the influence of a short channel effect and to reduce a source resistance by forming first and second low concentration layers using the same mask by ion implantation from oblique direction and perpendicular direction of the surface of a semi-insulating substrate. CONSTITUTION:A mask layer 3 and a mask layer 4 having a wider width than a gate length are formed on a GaAs substrate 1 having an active layer 2 on its surface. Then, impurity ions 5 are implanted from oblique direction to the surface of the substrate 1 to form the same conductivity type source, drain low concentration layers 6s, 6d as that of the layer 2. The layer 6s is formed to the section under the source of the layer 4 at this time. Then, impurity ions 7 are implanted perpendicularly to the surface of the substrate 1, and source, drain low concentration layers 8s, 8d having higher impurity concentration than those of the layers 6s, 6d are formed in the same conductivity type as that of the layer 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21940287A JPS6461064A (en) | 1987-09-01 | 1987-09-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21940287A JPS6461064A (en) | 1987-09-01 | 1987-09-01 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461064A true JPS6461064A (en) | 1989-03-08 |
Family
ID=16734847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21940287A Pending JPS6461064A (en) | 1987-09-01 | 1987-09-01 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461064A (en) |
-
1987
- 1987-09-01 JP JP21940287A patent/JPS6461064A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56155572A (en) | Insulated gate field effect type semiconductor device | |
EP0085916A3 (en) | Method of fabricating field effect transistors | |
JPS5333074A (en) | Production of complementary type insulated gate field effect semiconductor device | |
JPS57192063A (en) | Manufacture of semiconductor device | |
JPS6461064A (en) | Manufacture of semiconductor device | |
JPS6433970A (en) | Field effect semiconductor device | |
JPS57107067A (en) | Manufacture of semiconductor device | |
JPS6469054A (en) | Manufacture of mis type transistor | |
JPS54117691A (en) | Production of insulating gate-type semiconductor device | |
JPS645068A (en) | Manufacture of semiconductor device | |
JPS564279A (en) | Insulated gate type field effect transistor | |
JPS57133681A (en) | Field-effect semiconductor device | |
JPS5736863A (en) | Manufacture of semiconductor device | |
JPS5736861A (en) | Semiconductor device and manufacture thereof | |
JPS57141964A (en) | Insulated gate type field effect transistor | |
JPS63226922A (en) | Manufacture of semiconductor device | |
JPS57199266A (en) | Field effect transistor and manufacture thereof | |
JPS5688322A (en) | Processing method for semiconductor substrate | |
JPS5698876A (en) | Junction type fet | |
JPS572579A (en) | Manufacture of junction type field effect transistor | |
JPS53125779A (en) | Mos type semiconductor device | |
JPS6428961A (en) | Field-effect semiconductor device and manufacture thereof | |
JPS642368A (en) | Manufacture of field-effect transistor | |
JPS6465875A (en) | Thin film transistor and manufacture thereof | |
JPS57128965A (en) | Mis type semiconductor device |