JPS6457719A - Forming method for resist pattern - Google Patents
Forming method for resist patternInfo
- Publication number
- JPS6457719A JPS6457719A JP62214447A JP21444787A JPS6457719A JP S6457719 A JPS6457719 A JP S6457719A JP 62214447 A JP62214447 A JP 62214447A JP 21444787 A JP21444787 A JP 21444787A JP S6457719 A JPS6457719 A JP S6457719A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- resist
- whole
- onto
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To form an insulating film pattern having an excellent end-face shape by shaping an insulating film onto the whole surface on a foundation substrate, patterning the insulating film by a resist layer formed onto the insulating film, applying a resist onto the exposed surface of the substrate again and removing the insulating film. CONSTITUTION:An SiN layer 2 is formed onto the whole surface on a GaAs substrate 1 as an insulating film, and a resist layer 3 following a specified pattern is shaped onto the insulating film 2. The insulating film 2 is patterned by utilizing a pattern formed to the resist layer 3. The whole is dipped in acetone, and the resist layer 3 is removed once. A resist 4 in thickness of approximately 2mum is applied to the whole substrate 1, on which the patterned insulating film 2 is loaded, and the surface is flattened. The whole is etched by using oxygen gas by an RIE device gain, and etching is completed when the top face of the insulating film 2 is exposed. Lastly, the SiN film 2 is removed by employing diluted hydrofluoric acid, thus acquiring the resist pattern 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62214447A JPS6457719A (en) | 1987-08-28 | 1987-08-28 | Forming method for resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62214447A JPS6457719A (en) | 1987-08-28 | 1987-08-28 | Forming method for resist pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6457719A true JPS6457719A (en) | 1989-03-06 |
Family
ID=16655915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62214447A Pending JPS6457719A (en) | 1987-08-28 | 1987-08-28 | Forming method for resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6457719A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5211045A (en) * | 1990-02-23 | 1993-05-18 | Kabushiki Kaisha Komatsu Seisakusho | Apparatus for determining correct mounting of die assembly on press brake |
-
1987
- 1987-08-28 JP JP62214447A patent/JPS6457719A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5211045A (en) * | 1990-02-23 | 1993-05-18 | Kabushiki Kaisha Komatsu Seisakusho | Apparatus for determining correct mounting of die assembly on press brake |
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