JPS6455859A - Superlattice image sensing - Google Patents

Superlattice image sensing

Info

Publication number
JPS6455859A
JPS6455859A JP62213301A JP21330187A JPS6455859A JP S6455859 A JPS6455859 A JP S6455859A JP 62213301 A JP62213301 A JP 62213301A JP 21330187 A JP21330187 A JP 21330187A JP S6455859 A JPS6455859 A JP S6455859A
Authority
JP
Japan
Prior art keywords
superlattice
layer
impurity diffusion
type
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62213301A
Other languages
English (en)
Other versions
JPH0715979B2 (ja
Inventor
Mikihiro Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62213301A priority Critical patent/JPH0715979B2/ja
Priority to US07/233,592 priority patent/US4933731A/en
Priority to DE3829003A priority patent/DE3829003C2/de
Publication of JPS6455859A publication Critical patent/JPS6455859A/ja
Publication of JPH0715979B2 publication Critical patent/JPH0715979B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP62213301A 1987-08-27 1987-08-27 超格子撮像素子 Expired - Lifetime JPH0715979B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62213301A JPH0715979B2 (ja) 1987-08-27 1987-08-27 超格子撮像素子
US07/233,592 US4933731A (en) 1987-08-27 1988-08-18 Superlattice imaging device
DE3829003A DE3829003C2 (de) 1987-08-27 1988-08-26 Abbildungseinrichtung mit Lawinen-Photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213301A JPH0715979B2 (ja) 1987-08-27 1987-08-27 超格子撮像素子

Publications (2)

Publication Number Publication Date
JPS6455859A true JPS6455859A (en) 1989-03-02
JPH0715979B2 JPH0715979B2 (ja) 1995-02-22

Family

ID=16636859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213301A Expired - Lifetime JPH0715979B2 (ja) 1987-08-27 1987-08-27 超格子撮像素子

Country Status (3)

Country Link
US (1) US4933731A (ja)
JP (1) JPH0715979B2 (ja)
DE (1) DE3829003C2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5203587A (en) * 1990-12-18 1993-04-20 Trw Inc. Method of assembly of a combustion cup, filter, and diffuser cup for a vehicle occupant restraint inflator
JP2013084757A (ja) * 2011-10-10 2013-05-09 Denso Corp 撮像素子

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE58908801D1 (de) * 1988-11-23 1995-02-02 Telefunken Microelectron Bildsensor.
DE3839513A1 (de) * 1988-11-23 1990-05-31 Messerschmitt Boelkow Blohm Bildsensor
JP2838906B2 (ja) * 1989-08-04 1998-12-16 キヤノン株式会社 光電変換装置
US6127692A (en) * 1989-08-04 2000-10-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
US5162885A (en) * 1990-09-07 1992-11-10 Georgia Tech Research Corporation Acoustic charge transport imager
DE69032582T2 (de) * 1990-11-08 1999-05-06 Xsirius Scientific Corp., Marina Del Rey, Calif. Matrix von silizium-lawinenphotodioden
US5500522A (en) * 1991-09-30 1996-03-19 Luminis Pty. Limited Gallium arsenide MESFET imager
US5401952A (en) * 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
DE69229590T2 (de) * 1991-11-08 2000-03-30 Canon K.K., Tokio/Tokyo Schichtförmiger Festkörperbildsensor und Verfahren zu seiner Herstellung
DE69231398T2 (de) * 1991-11-22 2001-02-22 Canon K.K., Tokio/Tokyo Photoelektrischer Wandler und Steuerverfahren dafür
US5274246A (en) * 1992-05-04 1993-12-28 The United States Of America As Represented By The Secretary Of The Air Force Optical modulation and switching with enhanced third order nonlinearity multiple quantum well effects
US5444280A (en) * 1993-12-20 1995-08-22 Scientific Imaging Technologies, Inc. Photodetector comprising avalanche photosensing layer and interline CCD readout layer
US5557114A (en) * 1995-01-12 1996-09-17 International Business Machines Corporation Optical fet
JP3103064B2 (ja) * 1998-04-23 2000-10-23 松下電子工業株式会社 固体撮像装置およびその製造方法
JP2001332759A (ja) 2000-03-16 2001-11-30 Matsushita Electric Ind Co Ltd アバランシェフォトダイオード
US6858829B2 (en) * 2001-06-20 2005-02-22 Agilent Technologies, Inc. Avalanche photodiode array biasing device and avalanche photodiode structure
US8013359B2 (en) * 2003-12-31 2011-09-06 John W. Pettit Optically controlled electrical switching device based on wide bandgap semiconductors
WO2006008746A2 (en) * 2004-07-22 2006-01-26 Yissum Research Development Company Of The Hebrew University Of Jerusalem Integrated active pixel sensor and method of its fabrication
FR2971888A1 (fr) 2011-02-23 2012-08-24 St Microelectronics Crolles 2 Dispositif et procédé de mesure d'énergie lumineuse reçue par au moins un photosite.
JP5799538B2 (ja) * 2011-03-18 2015-10-28 セイコーエプソン株式会社 テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置
GB201116780D0 (en) * 2011-09-29 2011-11-09 Secr Defence Imaging sensor
JP5910064B2 (ja) * 2011-12-20 2016-04-27 セイコーエプソン株式会社 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
US9614112B2 (en) * 2013-09-11 2017-04-04 The University Of Connecticut Imaging cell array integrated circuit
JP7286778B2 (ja) * 2019-02-26 2023-06-05 エーエスエムエル ネザーランズ ビー．ブイ． 利得要素を備えた荷電粒子検出器およびその製造方法
GB2624158A (en) * 2022-11-03 2024-05-15 Sumitomo Chemical Co Device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54103630A (en) * 1978-02-01 1979-08-15 Matsushita Electric Ind Co Ltd Solid state pickup device
JPS61226973A (ja) * 1985-04-01 1986-10-08 Hitachi Ltd アバランシエホトダイオ−ド

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492810A (en) * 1978-03-08 1985-01-08 Sovonics Solar Systems Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
JPS5772369A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Semiconductor device building in light receiving element
JPS57162364A (en) * 1981-03-30 1982-10-06 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPS6118183A (ja) * 1984-07-04 1986-01-27 Fuji Photo Film Co Ltd 固体光検出デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54103630A (en) * 1978-02-01 1979-08-15 Matsushita Electric Ind Co Ltd Solid state pickup device
JPS61226973A (ja) * 1985-04-01 1986-10-08 Hitachi Ltd アバランシエホトダイオ−ド

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5203587A (en) * 1990-12-18 1993-04-20 Trw Inc. Method of assembly of a combustion cup, filter, and diffuser cup for a vehicle occupant restraint inflator
JP2013084757A (ja) * 2011-10-10 2013-05-09 Denso Corp 撮像素子

Also Published As

Publication number Publication date
DE3829003A1 (de) 1989-03-16
US4933731A (en) 1990-06-12
DE3829003C2 (de) 1994-02-24
JPH0715979B2 (ja) 1995-02-22

Similar Documents

Publication Publication Date Title
JPS6455859A (en) Superlattice image sensing
CA2050362C (en) Photo-sensing device
CN105720130B (zh) 基于量子阱带间跃迁的光电探测器
US3833762A (en) Solid state integrating, image motion compensating imager
US4613895A (en) Color responsive imaging device employing wavelength dependent semiconductor optical absorption
US4210922A (en) Charge coupled imaging device having selective wavelength sensitivity
EP2446483B1 (en) Low-level signal detection by semiconductor avalanche amplification
EP1094521A2 (en) Solar cell with bypass function and multi-junction stacked type solar cell with bypass function, and method for manufacturing these devices
US3623026A (en) Mis device and method for storing information and providing an optical readout
US4000503A (en) Cold cathode for infrared image tube
US20100108138A1 (en) Photovoltaic silicon solar cells
CA2109310A1 (en) Blue-green laser diode
GB1285049A (en) Charge storage target and device
US4144094A (en) Radiation responsive current generating cell and method of forming same
JPH03135037A (ja) 電荷結合デバイス
US4488163A (en) Highly isolated photodetectors
US5869851A (en) Photoelectric conversion device with graded band gap and carrier concentration
US3633077A (en) Semiconductor photoelectric converting device having spaced elements for decreasing surface recombination of minority carriers
JPS6413767A (en) Semiconductor device
US3916429A (en) Gated silicon diode array camera tube
JPS54103630A (en) Solid state pickup device
US4952995A (en) Infrared imager
US4953955A (en) Photovoltaic driven multiple quantum well optical modulator
JP2977164B2 (ja) 光電変換装置
JPH01149486A (ja) 半導体受光素子