JPS6450411A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6450411A
JPS6450411A JP20626987A JP20626987A JPS6450411A JP S6450411 A JPS6450411 A JP S6450411A JP 20626987 A JP20626987 A JP 20626987A JP 20626987 A JP20626987 A JP 20626987A JP S6450411 A JPS6450411 A JP S6450411A
Authority
JP
Japan
Prior art keywords
single crystal
opening part
semiconductor
layer
insulator layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20626987A
Other languages
Japanese (ja)
Inventor
Kazuyuki Sugahara
Tadashi Nishimura
Shigeru Kusunoki
Yasuaki Inoue
Keiichi Higashiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP20626987A priority Critical patent/JPS6450411A/en
Publication of JPS6450411A publication Critical patent/JPS6450411A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To prevent the occurrence of facets and to fill up an opening part flatly, by forming the opening part in an insulator layer so that a sidewall is provided along the direction within a specified angle range with respect to orientation <100> of a semiconductor single crystal, and growing a single crystal semiconductor layer in said opening part by a selective epitaxial growth method. CONSTITUTION:An insulator layer 2 is formed on the face (001) or on the main surface close to said surface of a semiconductor single crystal 1 directly or through a layer constituting a semiconductor circuit. Then, an opening part 3 reaching the semiconductor single crystal 1 is formed at the specified place of the insulator layer 2. The opening part 3 has a sidewall along the direction within a range of + or -5 deg. with respect to the orientation <100> of the semiconductor single crystal. Then, a single crystal semiconductor layer having the same crystal orientation as that of the semiconductor single crystal 1 is grown in the opening part 3 by a selective epitaxial growing method. Thus the step is not yielded at the interface between the single crystal semiconductor layer by the epitaxial growing in the opening part and the insulator layer. Therefore, the yield of a facet can be prevented.
JP20626987A 1987-08-21 1987-08-21 Manufacture of semiconductor device Pending JPS6450411A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20626987A JPS6450411A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20626987A JPS6450411A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6450411A true JPS6450411A (en) 1989-02-27

Family

ID=16520531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20626987A Pending JPS6450411A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6450411A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260124A (en) * 1984-06-06 1985-12-23 Nec Corp Manufacture of semiconductor substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260124A (en) * 1984-06-06 1985-12-23 Nec Corp Manufacture of semiconductor substrate

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