JPS6446996A - Method for realizing optical bistable function and optical bistable function element - Google Patents

Method for realizing optical bistable function and optical bistable function element

Info

Publication number
JPS6446996A
JPS6446996A JP19411788A JP19411788A JPS6446996A JP S6446996 A JPS6446996 A JP S6446996A JP 19411788 A JP19411788 A JP 19411788A JP 19411788 A JP19411788 A JP 19411788A JP S6446996 A JPS6446996 A JP S6446996A
Authority
JP
Japan
Prior art keywords
laser
oscillating
excited
light
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19411788A
Other languages
Japanese (ja)
Other versions
JPH0151074B2 (en
Inventor
Mutsuro Ogura
Takafumi Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP19411788A priority Critical patent/JPS6446996A/en
Publication of JPS6446996A publication Critical patent/JPS6446996A/en
Publication of JPH0151074B2 publication Critical patent/JPH0151074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To provide a vertical oscillating semiconductor laser capable of operating bistably and having both light amplifying effect and rapid switching properties, by operating the laser with its active layer excited at a slightly lower level than the oscillating threshold value. CONSTITUTION:On the principal face of a semiconductor substrate 4, there are provided a lower reflector 3, an active layer 2 and an upper reflector 1 sequentially one on another to produce a vertical oscillating semiconductor laser, The vertical oscillating semiconductor laser thus produced is operated with its active layer 2 excited at a slightly lower level than the oscillating threshold value. The oscillating conditions of the laser in operation are reversibly controlled by inputting light from the outside of the laser. Thereby, high refractive index layers in the upper reflector 1 are excited and the absorption factor to laser light is decreased. Loss of an optical resonator is also decreased equivalently and the laser can be shifted to oscillating state. Once the laser has entered into the oscillating state, it can keep the high refractive index layers in the upper reflector 1 excited by its own laser light and can continue oscillation if external exciting light is removed.
JP19411788A 1988-08-03 1988-08-03 Method for realizing optical bistable function and optical bistable function element Granted JPS6446996A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19411788A JPS6446996A (en) 1988-08-03 1988-08-03 Method for realizing optical bistable function and optical bistable function element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19411788A JPS6446996A (en) 1988-08-03 1988-08-03 Method for realizing optical bistable function and optical bistable function element

Publications (2)

Publication Number Publication Date
JPS6446996A true JPS6446996A (en) 1989-02-21
JPH0151074B2 JPH0151074B2 (en) 1989-11-01

Family

ID=16319202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19411788A Granted JPS6446996A (en) 1988-08-03 1988-08-03 Method for realizing optical bistable function and optical bistable function element

Country Status (1)

Country Link
JP (1) JPS6446996A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5031187A (en) * 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
US5056098A (en) * 1990-07-05 1991-10-08 At&T Bell Laboratories Vertical cavity laser with mirror having controllable reflectivity
JPH03239386A (en) * 1990-02-16 1991-10-24 Nec Corp Surface emitting type semiconductor laser
JPH03240285A (en) * 1990-02-19 1991-10-25 Nippon Telegr & Teleph Corp <Ntt> Bistable semiconductor laser
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648192A (en) * 1979-09-13 1981-05-01 Xerox Corp Lateral light emitting electroluminescence unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648192A (en) * 1979-09-13 1981-05-01 Xerox Corp Lateral light emitting electroluminescence unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5031187A (en) * 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
JPH03239386A (en) * 1990-02-16 1991-10-24 Nec Corp Surface emitting type semiconductor laser
JPH03240285A (en) * 1990-02-19 1991-10-25 Nippon Telegr & Teleph Corp <Ntt> Bistable semiconductor laser
US5056098A (en) * 1990-07-05 1991-10-08 At&T Bell Laboratories Vertical cavity laser with mirror having controllable reflectivity
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes

Also Published As

Publication number Publication date
JPH0151074B2 (en) 1989-11-01

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