JPS6424482A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6424482A
JPS6424482A JP17989787A JP17989787A JPS6424482A JP S6424482 A JPS6424482 A JP S6424482A JP 17989787 A JP17989787 A JP 17989787A JP 17989787 A JP17989787 A JP 17989787A JP S6424482 A JPS6424482 A JP S6424482A
Authority
JP
Japan
Prior art keywords
region
waveguide path
waveguide
path
mach
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17989787A
Other languages
Japanese (ja)
Other versions
JPH084179B2 (en
Inventor
Katsuyuki Uko
Kazuo Sakai
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP17989787A priority Critical patent/JPH084179B2/en
Publication of JPS6424482A publication Critical patent/JPS6424482A/en
Publication of JPH084179B2 publication Critical patent/JPH084179B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Abstract

PURPOSE:To select only one resonant wavelength so as to make a laser operate in a narrow oscillating laser ray with a single wavelength by a method wherein a Mach-Zehnder interference type waveguide path is provided in a semiconductor laser resonator. CONSTITUTION:Carriers are injected into a light emitting region A which has an optical gain. A Mach-Zehnder interference type waveguide path region B is ramified into a waveguide path I(b1-b3-b5) and a waveguide path II(b2-b4-b6) which are different from each other in a refractive index, and similar to a structure of the Mach-Zehnder interferometer. A phase adjusting waveguide path region C performs the phase adjustment of the waveguide paths I and II simultaneously. The waveguide paths I and II of the region B are disposed on one extension of a waveguide path a which is optically connected with a light emitting layer 2 of the light emitting region A. Carriers injected into the region B or the voltage impressed on the region B is made to vary so as to change a wavelength path layer 3 in a refractive index. In addition, 5 and 6 are reflective end faces which constitute a laser resonator.
JP17989787A 1987-07-21 1987-07-21 Semiconductor laser Expired - Fee Related JPH084179B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17989787A JPH084179B2 (en) 1987-07-21 1987-07-21 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17989787A JPH084179B2 (en) 1987-07-21 1987-07-21 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6424482A true JPS6424482A (en) 1989-01-26
JPH084179B2 JPH084179B2 (en) 1996-01-17

Family

ID=16073814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17989787A Expired - Fee Related JPH084179B2 (en) 1987-07-21 1987-07-21 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPH084179B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641052A1 (en) * 1993-08-26 1995-03-01 Anritsu Corporation Tunable Wavelength light source incorporated optical filter using interferometer into external cavity
JPH07301716A (en) * 1993-12-16 1995-11-14 Cselt Spa (Cent Stud E Lab Telecomun) Resonance filter for wavelength-division multiplexing optical communication system
WO2002054544A3 (en) * 2001-01-02 2003-09-04 Fiberspace Inc Tunable semiconductor laser having a cavity with wavelength selective mirror and mach-tehnder interferometer
WO2004004082A1 (en) * 2002-06-28 2004-01-08 California Institute Of Technology Optical resonator and laser applications

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641052A1 (en) * 1993-08-26 1995-03-01 Anritsu Corporation Tunable Wavelength light source incorporated optical filter using interferometer into external cavity
US5444724A (en) * 1993-08-26 1995-08-22 Anritsu Corporation Tunable wavelength light source incorporated optical filter using interferometer into external cavity
JPH07301716A (en) * 1993-12-16 1995-11-14 Cselt Spa (Cent Stud E Lab Telecomun) Resonance filter for wavelength-division multiplexing optical communication system
WO2002054544A3 (en) * 2001-01-02 2003-09-04 Fiberspace Inc Tunable semiconductor laser having a cavity with wavelength selective mirror and mach-tehnder interferometer
WO2004004082A1 (en) * 2002-06-28 2004-01-08 California Institute Of Technology Optical resonator and laser applications

Also Published As

Publication number Publication date
JPH084179B2 (en) 1996-01-17

Similar Documents

Publication Publication Date Title
GB8727212D0 (en) Optical beam steering device
JPS6424483A (en) Semiconductor laser
WO1995005617A1 (en) Enhancing the nonlinearity of an optical waveguide
SE9302622L (en) Digital switch with almost z-distribution
EP0379704A3 (en) Integrated optic print head
JPS5511310A (en) Semiconductor laser element
JPS6424482A (en) Semiconductor laser
JP2001320127A (en) Semiconductor laser
CA2052922A1 (en) Optical waveguide type wavelength filter
JPS57158616A (en) Optical coupler
JPS6476012A (en) Periodic type optical filter
JPS645088A (en) Semiconductor laser device
JPS5715465A (en) Large scale optical integrated circuit
FR2612649B1 (en) METHOD FOR MODIFYING THE COEFFICIENT OF REFLECTION OF THE END OF A SINGLE-MODE OPTICAL FIBER AND FIBER-OPTIC INTERFEROMETER CARRIED OUT USING THE SAME
JPS547949A (en) Wavelength descriminator
JP2875537B2 (en) Frequency multiplexing optical communication detector
JPS57158615A (en) Optical coupler
JPS643624A (en) Waveguide type optical interferometer
JPS57111512A (en) Coupling device of semiconductor laser to optical fiber
JPS57158617A (en) Optical coupler
JPS57211104A (en) Directional coupler type optical demultiplexer having periodic structure
JPS6472583A (en) Wavelength tunable semiconductor laser
JPS5793586A (en) Photocoupling interrupter
JPH04112589A (en) Optical control type optical frequency modulator
YASUKI et al. Semiconductor laser

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees