JPS6472583A - Wavelength tunable semiconductor laser - Google Patents

Wavelength tunable semiconductor laser

Info

Publication number
JPS6472583A
JPS6472583A JP22891087A JP22891087A JPS6472583A JP S6472583 A JPS6472583 A JP S6472583A JP 22891087 A JP22891087 A JP 22891087A JP 22891087 A JP22891087 A JP 22891087A JP S6472583 A JPS6472583 A JP S6472583A
Authority
JP
Japan
Prior art keywords
layer
waveguide
thickness
single crystal
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22891087A
Other languages
Japanese (ja)
Other versions
JP2666297B2 (en
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62228910A priority Critical patent/JP2666297B2/en
Publication of JPS6472583A publication Critical patent/JPS6472583A/en
Application granted granted Critical
Publication of JP2666297B2 publication Critical patent/JP2666297B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating

Abstract

PURPOSE:To increase the width of variation of an emitted light wavelength by forming a waveguide having a variable refractive index in a superlattice structure formed of a base crystal layer and a single crystal layer having smaller energy gap than that of the base layer, and forming the thickness of the single crystal layer so as to sequentially increase the thickness toward a separation from its center. CONSTITUTION:An optical resonator is provided in a semiconductor single crystal, and a voltage is applied to the part of the waveguide of the resonator to vary the refractive index of the waveguide. In such a semiconductor laser, the waveguide having the variable refractive index is formed in a superlattice structure formed of a base crystal layer and a single cryltal layer having smaller energy gap than that of the base crystal in such a manner that the thicknesses of the single crystal layers each having the small energy gap are so increased sequentially toward a separation from its center. For example, the superlattice layer 3b is formed of an InGaAsP layer for forming a quantum well and an InP layer of a barrier layer, and the thickness of the two n-th InGaAsP layers counted from the central layer are set to (1+alphan2)W0 with respect to the thickness W0 of the InGaAsP layer disposed at the center.
JP62228910A 1987-09-11 1987-09-11 Tunable semiconductor laser Expired - Lifetime JP2666297B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228910A JP2666297B2 (en) 1987-09-11 1987-09-11 Tunable semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228910A JP2666297B2 (en) 1987-09-11 1987-09-11 Tunable semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6472583A true JPS6472583A (en) 1989-03-17
JP2666297B2 JP2666297B2 (en) 1997-10-22

Family

ID=16883768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228910A Expired - Lifetime JP2666297B2 (en) 1987-09-11 1987-09-11 Tunable semiconductor laser

Country Status (1)

Country Link
JP (1) JP2666297B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152784A (en) * 1987-12-10 1989-06-15 Sony Corp Electrode structure of semiconductor laser
JPH01175784A (en) * 1987-12-29 1989-07-12 Matsushita Electric Ind Co Ltd Optical integrated circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561589A (en) * 1979-06-18 1981-01-09 Furukawa Electric Co Ltd:The Method of controlling laser oscillation output
JPS6142189A (en) * 1984-08-02 1986-02-28 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS6154690A (en) * 1984-08-24 1986-03-18 Nec Corp Semiconductor laser device
JPS61116896A (en) * 1984-11-13 1986-06-04 Sharp Corp Semiconductor laser device
JPS62183587A (en) * 1986-02-07 1987-08-11 Fujitsu Ltd Semiconductor laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561589A (en) * 1979-06-18 1981-01-09 Furukawa Electric Co Ltd:The Method of controlling laser oscillation output
JPS6142189A (en) * 1984-08-02 1986-02-28 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS6154690A (en) * 1984-08-24 1986-03-18 Nec Corp Semiconductor laser device
JPS61116896A (en) * 1984-11-13 1986-06-04 Sharp Corp Semiconductor laser device
JPS62183587A (en) * 1986-02-07 1987-08-11 Fujitsu Ltd Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152784A (en) * 1987-12-10 1989-06-15 Sony Corp Electrode structure of semiconductor laser
JPH01175784A (en) * 1987-12-29 1989-07-12 Matsushita Electric Ind Co Ltd Optical integrated circuit

Also Published As

Publication number Publication date
JP2666297B2 (en) 1997-10-22

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