JPS62183587A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS62183587A JPS62183587A JP2503686A JP2503686A JPS62183587A JP S62183587 A JPS62183587 A JP S62183587A JP 2503686 A JP2503686 A JP 2503686A JP 2503686 A JP2503686 A JP 2503686A JP S62183587 A JPS62183587 A JP S62183587A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- quantum well
- side electrode
- layer
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 239000000969 carrier Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 4
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 description 10
- 238000005253 cladding Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
Abstract
Description
【発明の詳細な説明】
〔概要〕
この発明は分布反射形半導体レーザにかがり、ブラッグ
反射鏡上の光導波路に量子井戸構造を備え、その積層方
向に半導体基体のｐｎ接合に対して逆方向の電界を印加
することにより、電力を消費することなく、発振波長制
御を可能とするものである。[Detailed Description of the Invention] [Summary] The present invention relates to a distributed reflection type semiconductor laser, which has a quantum well structure in an optical waveguide on a Bragg reflector, and has a quantum well structure in the stacking direction opposite to the pn junction of the semiconductor substrate. By applying an electric field, it is possible to control the oscillation wavelength without consuming power.
本発明は半導体レーザにかかり、特にその発振波長制御
手段の改善に関する。The present invention relates to semiconductor lasers, and particularly relates to improvements in oscillation wavelength control means thereof.
光を情報信号の媒体とする光通信その他のシステムの高
度化、多様化が推進されており、例えばコヒーレント通
信などについてその光源である半導体レーザの発振波長
制御が必要となっている。2. Description of the Related Art Optical communication and other systems that use light as a medium for information signals are becoming more sophisticated and diversified, and for example, it is necessary to control the oscillation wavelength of a semiconductor laser, which is a light source, for coherent communication.
半導体レーザについて多（の構造が提供されているが、
発振波長制御に適する半導体レーザとしては光共振器鏡
にブラッグ反射鏡を用いる分布反射形（ＤＢＲ： Ｄｉ
ｓｔｒｉｂｕｔｅｄ Ｂｒａｇｇ Ｒｅｆｌｅｃｔｏｒ
）レーザが知られている。Although many structures have been provided for semiconductor lasers,
As a semiconductor laser suitable for oscillation wavelength control, a distributed reflection type (DBR: Di
distributed Bragg Reflector
) laser is known.
第２図は従来の分布反射形レーザの例を示す模式側断面
図である。同図において、２１はｎ型１ｎＰ半導体基板
、２２はｎ型ＩｎＰクラッド層、２３はＩｎＧａＡｓＰ
導波層、２４はＩｎＧａＡｓＰ活性層、２５はｐ型Ｉｎ
Ｐクラッド層、２６はｐ型ＩｎＧａＡｓＰコンタクト層
、２７はグレイティング、２８はｎ型拡散分離領域、３
ｏはｐ側電極、３１は制御電極、３２はｎ側電極、３３
は襞間面である。FIG. 2 is a schematic side sectional view showing an example of a conventional distributed reflection laser. In the figure, 21 is an n-type 1nP semiconductor substrate, 22 is an n-type InP cladding layer, and 23 is InGaAsP.
waveguide layer, 24 is InGaAsP active layer, 25 is p-type In
P cladding layer, 26 p-type InGaAsP contact layer, 27 grating, 28 n-type diffusion isolation region, 3
o is a p-side electrode, 31 is a control electrode, 32 is an n-side electrode, 33
is the interfold plane.
本従来例はｐ側電極３０とｎ側電極３２間の電流注入に
よりｐ側電極３０下のＩｎＧａＡｓＰ活性層２４で発光
するが、ＩｎＧａＡｓＰ活性層２４及び導波層２３を導
波路とし、グレイティング２７によるブラッグ反射と襞
間面３３による反射とで構成する光共振器によって発振
波長が定まる。従ってグレイティング２７部分のＩｎＧ
ａＡｓＰ導波層２３の屈折率を変化させれば発振波長を
制御することができ、制御電極３１とｎ側電極３２との
間に電流を通ずることによってこの屈折率変化を行って
いる。In this conventional example, light is emitted in the InGaAsP active layer 24 under the p-side electrode 30 by current injection between the p-side electrode 30 and the n-side electrode 32. The oscillation wavelength is determined by the optical resonator formed by the Bragg reflection caused by the interfold surface 33 and the reflection caused by the interfold surface 33. Therefore, InG of grating 27 part
The oscillation wavelength can be controlled by changing the refractive index of the aAsP waveguide layer 23, and this refractive index change is performed by passing a current between the control electrode 31 and the n-side electrode 32.
上述の如くグレイティング２７部分のＩｎＧａＡｓＰ導
波層２３の屈折率変化のために電流を通ずる従来の分布
反射形レーザでは、この電流による消費電力の増大、温
度上昇を伴っており、環境温度条件の制約、信顛度低下
の要因となっている。As mentioned above, in the conventional distributed reflection laser in which current is passed due to the change in the refractive index of the InGaAsP waveguide layer 23 in the grating 27 portion, this current causes an increase in power consumption and a rise in temperature. This is a cause of restrictions and a decline in credibility.
前記問題点は、光電変換領域にキャリア注入を行う電流
の経路外に光共振器を形成するブラッグ反射鏡を備え、
かつ該共振器の導波路に量子井戸構造を含んで、該ブラ
ッグ反射鏡近傍の該量子井戸構造に、積層方向にかつ半
導体基体に設けられたｐｎ接合に対して逆方向に電界を
印加する手段を備えてなる本発明による半導体レーザに
より解決される。The above-mentioned problem is solved by including a Bragg reflector that forms an optical resonator outside the path of the current that injects carriers into the photoelectric conversion region;
and means for including a quantum well structure in the waveguide of the resonator and applying an electric field to the quantum well structure near the Bragg reflector in the stacking direction and in the opposite direction to the pn junction provided in the semiconductor substrate. The problem is solved by a semiconductor laser according to the present invention comprising:
本発明によれば、光電変換領域にキャリア注入を行う電
流の経路外にブラッグ反射鏡を設けて光共振器を形成す
る分布反射形半導体レーザにおいて、少なくともそのブ
ラッグ反射鏡近傍の光導波路に量子井戸構造を設けて、
その積層方向に半導体基体に設けられたｐｎ接合に対し
て逆方向の電界を印加する。According to the present invention, in a distributed reflection semiconductor laser in which an optical resonator is formed by providing a Bragg reflector outside the path of a current that injects carriers into a photoelectric conversion region, a quantum well is formed in at least an optical waveguide near the Bragg reflector. Set up a structure,
An electric field in the opposite direction is applied to the pn junction provided in the semiconductor substrate in the stacking direction.
この様に量子井戸構造に電界を印加すれば、バリアの変
化により量子井戸内のキャリアの波動関数、従って光の
屈折率が変化する。この屈折率変化量は量子力学的効果
のない半導体層に比較して著しく大きく、共振波長の微
調整に十分である。When an electric field is applied to the quantum well structure in this manner, the wave function of carriers within the quantum well, and therefore the refractive index of light, changes due to changes in the barrier. This amount of refractive index change is significantly larger than that of a semiconductor layer without quantum mechanical effects, and is sufficient for fine adjustment of the resonant wavelength.
本発明の電界印加はｐｎ接合に対して逆方向であるため
に、前記従来例の如き電流による発熱、温度上昇を伴わ
ない。Since the electric field of the present invention is applied in the opposite direction to the pn junction, there is no heat generation or temperature rise due to current as in the conventional example.
以下本発明を実施例により具体的に説明する。 The present invention will be specifically explained below using examples.
第１図（ａ）は本発明の実施例の模式側断面図、同図（
ｂ）はその半導体基体の構成を示す図であり、１はｎ型
１ｎＰ半導体基板、２はｎ型ＩｎＰクラッド層、３はＩ
ｎＧａＡｓＰ系導波層、４はＩｎＧａＡｓＰ系量子井戸
活性層、５はｐ型ＩｎＰクラッド層、６はｐ型１ｎＧａ
ＡｓＰコンタクト層、７はグレイティング、８はｎ型拡
散分離領域、１０はｐ側電極、１１は制御電極、１２は
ｎ側電極、１３は襞間面である。FIG. 1(a) is a schematic side sectional view of an embodiment of the present invention;
b) is a diagram showing the structure of the semiconductor substrate, where 1 is an n-type 1nP semiconductor substrate, 2 is an n-type InP cladding layer, and 3 is an I
nGaAsP-based waveguide layer, 4 is InGaAsP-based quantum well active layer, 5 is p-type InP cladding layer, 6 is p-type 1nGa
AsP contact layer, 7 is a grating, 8 is an n-type diffusion isolation region, 10 is a p-side electrode, 11 is a control electrode, 12 is an n-side electrode, and 13 is an inter-fold surface.
本実施例では活性層４ （導波層３とともに導波路とな
る）を組成が異なる２種のＩｎＧａＡｓＰ層４ａ。In this embodiment, the active layer 4 (which forms a waveguide together with the waveguide layer 3) is composed of two types of InGaAsP layers 4a having different compositions.
４ｂからなる量子井戸構造としている。なお導波層３は
ＧＲＩＮ−５ＣＨ（ＧＲａｄｅｄ ＩＮｄｅｘ ｗａｖ
ｅｇｕｉｄｅ ＳｅｐａｒａｔｅＣｏｎｆｉｎｅｍｅｎ
ｔ Ｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅ）構造として特性
の向上を計っているが、これらの各半導体層の構成は例
えば下記の様である。ただしＩｎＧａＡｓＰの組成はル
ミネセンスピーク波長λｇで示す。It has a quantum well structure consisting of 4b. Note that the waveguide layer 3 is GRIN-5CH (GRADED INdex wav
guideSeparateConfinemen
The structure of each of these semiconductor layers is as follows, for example. However, the composition of InGaAsP is indicated by the luminescence peak wavelength λg.
半導体層 組成 不純物 厚さくλｇ：＃
ｌ１ｌ） ｃｍ−’ ｎｍ６コンタクト
層１ｎＧａＡｓＰ（１，２） ｐ−ｌＸｌ０１９５０
５クラッド層 ＩｎＰ ｐ−Ｉ Ｘ １０
’ ” ２００４活性層（量子井戸構造）
４ｂ （３層） ＩｎＧａＡｓＰ（１，２）ノンド
ープ ３４ａ （４層） ＩｎＧａＡｓＰ（１，
６）ノンドープ ３２クラッド層 ＩｎＰ
ｎ−ｌＸｌ０” ３’００なおグレイティング７
はｎ型１ｎＰクラッド層２の表面をパターニングして導
波層３との界面に形成し、ｎ型拡散分離領域８はシリコ
ン（Ｓｔ）をイオン注入して形成している。Semiconductor layer Composition Impurity Thickness λg: #
l1l) cm-' nm6 contact layer 1nGaAsP(1,2) p-lXl01950
5 cladding layer InP p-I X 10
' 2004 Active layer (quantum well structure) 4b (3 layers) InGaAsP(1,2) non-doped 34a (4 layers) InGaAsP(1,
6) Non-doped 32 cladding layer InP
n-lXl0"3'00 Grating 7
is formed at the interface with the waveguide layer 3 by patterning the surface of the n-type 1nP cladding layer 2, and the n-type diffusion isolation region 8 is formed by ion-implanting silicon (St).
この半導体レーザ素子は、ｐ側電極１０とｎ側電極１２
からの電流注入によりｐ側電極１０下の量子井戸活性層
４で発光し、この活性層４及び導波層３を導波路とし、
グレイティング７によるブラッグ反射と襞間面１３によ
る反射とで構成する光共振器によって発振波長が定まる
ことは前記従来例と同様であるが、グレイティング７上
のこの導波路に量子井戸構造が含まれ、制御電極１１に
ｎ側電極１２に対してマイナスの電圧を印加してその屈
折率を変化させ発振波長を制御することができる。This semiconductor laser device has a p-side electrode 10 and an n-side electrode 12.
Light is emitted in the quantum well active layer 4 under the p-side electrode 10 by current injection from the p-side electrode 10, and this active layer 4 and waveguide layer 3 are used as a waveguide.
The oscillation wavelength is determined by the optical resonator formed by the Bragg reflection by the grating 7 and the reflection by the interfold surface 13, as in the conventional example, but this waveguide on the grating 7 includes a quantum well structure. By applying a negative voltage to the control electrode 11 with respect to the n-side electrode 12, the refractive index can be changed and the oscillation wavelength can be controlled.
本実施例は波長１．５−帯域で約０．０１−の発振波長
微調整が可能であり、かつ制御電極１１への電圧印加に
伴う温度上昇の増加は無視できる程度に止まっている。In this embodiment, the oscillation wavelength can be finely adjusted by about 0.01 in the wavelength 1.5 band, and the increase in temperature due to voltage application to the control electrode 11 is negligible.
（発明の効果〕
以上説明した如く本発明による半導体レーザは発振波長
制御、調整が可能で、従来問題であった消費電力、温度
上昇の増加が解決され、光通信等の進展に大きく寄与す
る。(Effects of the Invention) As explained above, the semiconductor laser according to the present invention is capable of controlling and adjusting the oscillation wavelength, solving the conventional problems of increased power consumption and temperature rise, and greatly contributing to the advancement of optical communications and the like.
第１図＋１１１は本発明の実施例の模式側断面図、第１
図（ｂｌはその半導体基体の構成を示す図、第２図は従
来例の模式側断面図である。
図において、
１はｎ型１ｎＰ半導体基板、
２はｎ型１ｎＰクラッド層、
３はＩｎＧａＡｓＰ系導波層、
４はＩｎＧａＡｓＰ系量子井戸活性層、５はｐ型ＩｎＰ
クラッド層、
６はｐ型１ｎＧａＡｓＰコンタクト層、７はグレイティ
ング・
８はｎ型拡散分離領域、
１０はｐ側電極、 １１は制御電極、１２はｎ
側電極、 １３は襞間面を示す。
享ぐう漬也４タリｆ）４夾４＼、イ貝′ｊ目ヒ自−ｉｍ
峯 １ 圀（ｄ）
不 １ 川 （し）Figure 1+111 is a schematic side sectional view of an embodiment of the present invention;
Figure (bl is a diagram showing the structure of the semiconductor substrate, and Figure 2 is a schematic side sectional view of a conventional example. In the figure, 1 is an n-type 1nP semiconductor substrate, 2 is an n-type 1nP cladding layer, and 3 is an InGaAsP-based semiconductor substrate. Waveguide layer, 4 is InGaAsP quantum well active layer, 5 is p-type InP
cladding layer, 6 is p-type 1nGaAsP contact layer, 7 is grating, 8 is n-type diffusion isolation region, 10 is p-side electrode, 11 is control electrode, 12 is n-type
The side electrode 13 indicates the interfold surface. Kyouguzukeya4tarif)4夾4＼、Ikai'j eyeshiji-im
Mine 1 Kuni (d) Fu 1 River (shi)
Claims (1)
振器を形成するブラッグ反射鏡を備え、かつ該共振器の
導波路に量子井戸構造を含んで、該ブラッグ反射鏡近傍
の該量子井戸構造に、積層方向にかつ半導体基体に設け
られたｐｎ接合に対して逆方向に電界を印加する手段を
備えてなることを特徴とする半導体レーザ。a Bragg reflector forming an optical resonator outside the path of the current that injects carriers into the photoelectric conversion region, and a waveguide of the resonator includes a quantum well structure, the quantum well structure near the Bragg reflector; A semiconductor laser comprising means for applying an electric field in the stacking direction and in the opposite direction to the pn junction provided in the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61025036A JPH0714101B2 (en) | 1986-02-07 | 1986-02-07 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61025036A JPH0714101B2 (en) | 1986-02-07 | 1986-02-07 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62183587A true JPS62183587A (en) | 1987-08-11 |
| JPH0714101B2 JPH0714101B2 (en) | 1995-02-15 |
Family
ID=12154681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61025036A Expired - Fee Related JPH0714101B2 (en) | 1986-02-07 | 1986-02-07 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0714101B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6472583A (en) * | 1987-09-11 | 1989-03-17 | Fujitsu Ltd | Wavelength tunable semiconductor laser |
| FR2748353A1 (en) * | 1996-05-06 | 1997-11-07 | France Telecom | Distributed Bragg Reflector laser diode for transmitter in WDM optical communications |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57172790A (en) * | 1981-04-16 | 1982-10-23 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS60145692A (en) * | 1984-01-10 | 1985-08-01 | Nec Corp | Single axial mode semiconductor laser |
-
1986
- 1986-02-07 JP JP61025036A patent/JPH0714101B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57172790A (en) * | 1981-04-16 | 1982-10-23 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS60145692A (en) * | 1984-01-10 | 1985-08-01 | Nec Corp | Single axial mode semiconductor laser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6472583A (en) * | 1987-09-11 | 1989-03-17 | Fujitsu Ltd | Wavelength tunable semiconductor laser |
| JP2666297B2 (en) * | 1987-09-11 | 1997-10-22 | 富士通株式会社 | Tunable semiconductor laser |
| FR2748353A1 (en) * | 1996-05-06 | 1997-11-07 | France Telecom | Distributed Bragg Reflector laser diode for transmitter in WDM optical communications |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0714101B2 (en) | 1995-02-15 |
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