JPS6459982A - Constant wavelength oscillation semiconductor laser - Google Patents

Constant wavelength oscillation semiconductor laser

Info

Publication number
JPS6459982A
JPS6459982A JP21823887A JP21823887A JPS6459982A JP S6459982 A JPS6459982 A JP S6459982A JP 21823887 A JP21823887 A JP 21823887A JP 21823887 A JP21823887 A JP 21823887A JP S6459982 A JPS6459982 A JP S6459982A
Authority
JP
Japan
Prior art keywords
active layer
laser
oscillation
efficiently
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21823887A
Other languages
Japanese (ja)
Inventor
Akira Mita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21823887A priority Critical patent/JPS6459982A/en
Publication of JPS6459982A publication Critical patent/JPS6459982A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels

Abstract

PURPOSE:To realize a semicoductor laser which can oscillate efficiently at a wavelength of 1.06mum, which is small in size and, further, which can supply a high crest output by a means such as an external Q switch by a method wherein the band width of the material of which the active layer of the laser is made and the content of Nd in the active layer are specified. CONSTITUTION:A barrier layer 3, an active layer 4 and an upper barrier layer 5 which have composition of InGaAs/GaAs or AlGaAs/GaAs are successively built up on a substrate crystal 1 with a buffer layer 2 between and about 1atomic% of Nd is contained in the active layer 4. The composition of the active layer is so predetermined as to excite the excitation level of Nd efficiently and facilitate the 4th level laser oscillation. In other words, it is necessary to have the band width of the active layer not less than 1.55eV. With a laser like this, an oscillation of a wavelength of 1.06mum which is characteristic of Nd can be realized. Further, in order to realize this effect more efficiently, a structure by which the oscillation characteristic of base material is suppressed or completely confined in the semiconductor laser and a wavelength selection device which promote the oscillation of 1.06mum are provided.
JP21823887A 1987-08-31 1987-08-31 Constant wavelength oscillation semiconductor laser Pending JPS6459982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21823887A JPS6459982A (en) 1987-08-31 1987-08-31 Constant wavelength oscillation semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21823887A JPS6459982A (en) 1987-08-31 1987-08-31 Constant wavelength oscillation semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6459982A true JPS6459982A (en) 1989-03-07

Family

ID=16716759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21823887A Pending JPS6459982A (en) 1987-08-31 1987-08-31 Constant wavelength oscillation semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6459982A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH035336A (en) * 1989-05-30 1991-01-11 Hisankabutsu Glass Kenkyu Kaihatsu Kk Production of infrared glass image fiber
JPH03285837A (en) * 1990-04-03 1991-12-17 Hisankabutsu Glass Kenkyu Kaihatsu Kk Manufacture of infrared image bundle

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH035336A (en) * 1989-05-30 1991-01-11 Hisankabutsu Glass Kenkyu Kaihatsu Kk Production of infrared glass image fiber
JPH03285837A (en) * 1990-04-03 1991-12-17 Hisankabutsu Glass Kenkyu Kaihatsu Kk Manufacture of infrared image bundle

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