JPS6446995A - Semiconductor laser light source apparatus - Google Patents

Semiconductor laser light source apparatus

Info

Publication number
JPS6446995A
JPS6446995A JP62203163A JP20316387A JPS6446995A JP S6446995 A JPS6446995 A JP S6446995A JP 62203163 A JP62203163 A JP 62203163A JP 20316387 A JP20316387 A JP 20316387A JP S6446995 A JPS6446995 A JP S6446995A
Authority
JP
Japan
Prior art keywords
laser light
waveguide
grating waveguide
light
generating means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62203163A
Other languages
English (en)
Inventor
Osamu Mitomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62203163A priority Critical patent/JPS6446995A/ja
Publication of JPS6446995A publication Critical patent/JPS6446995A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
JP62203163A 1987-08-17 1987-08-17 Semiconductor laser light source apparatus Pending JPS6446995A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62203163A JPS6446995A (en) 1987-08-17 1987-08-17 Semiconductor laser light source apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62203163A JPS6446995A (en) 1987-08-17 1987-08-17 Semiconductor laser light source apparatus

Publications (1)

Publication Number Publication Date
JPS6446995A true JPS6446995A (en) 1989-02-21

Family

ID=16469486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62203163A Pending JPS6446995A (en) 1987-08-17 1987-08-17 Semiconductor laser light source apparatus

Country Status (1)

Country Link
JP (1) JPS6446995A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04107281A (ja) * 1990-08-27 1992-04-08 Nec Corp Ｆｅを含む物質のエッチング方法およびエッチング装置
JPH04230088A (ja) * 1990-06-19 1992-08-19 American Teleph & Telegr Co <Att> 光モジュールの製造方法
JP2001177182A (ja) * 1999-12-16 2001-06-29 Fujitsu Ltd 外部共振器型半導体レーザおよび光導波路装置
JP2003515253A (ja) * 1999-11-12 2003-04-22 スパーコラー・コーポレーション テーパ型平面光導波路
AU2003235944B2 (en) * 2002-04-26 2006-06-29 The Furukawa Battery Co., Ltd. Method of Manufacturing Lead or Lead Alloy Plate Lattice for Lead-Acid Battery and Lead-Acid Battery
JP2011253930A (ja) * 2010-06-02 2011-12-15 Fujitsu Ltd 半導体光装置
WO2017056499A1 (ja) * 2015-09-29 2017-04-06 日本電信電話株式会社 半導体レーザ装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04230088A (ja) * 1990-06-19 1992-08-19 American Teleph & Telegr Co <Att> 光モジュールの製造方法
JPH04107281A (ja) * 1990-08-27 1992-04-08 Nec Corp Ｆｅを含む物質のエッチング方法およびエッチング装置
JP2003515253A (ja) * 1999-11-12 2003-04-22 スパーコラー・コーポレーション テーパ型平面光導波路
JP2001177182A (ja) * 1999-12-16 2001-06-29 Fujitsu Ltd 外部共振器型半導体レーザおよび光導波路装置
AU2003235944B2 (en) * 2002-04-26 2006-06-29 The Furukawa Battery Co., Ltd. Method of Manufacturing Lead or Lead Alloy Plate Lattice for Lead-Acid Battery and Lead-Acid Battery
JP2011253930A (ja) * 2010-06-02 2011-12-15 Fujitsu Ltd 半導体光装置
WO2017056499A1 (ja) * 2015-09-29 2017-04-06 日本電信電話株式会社 半導体レーザ装置
JPWO2017056499A1 (ja) * 2015-09-29 2018-03-01 日本電信電話株式会社 半導体レーザ装置
CN108141006A (zh) * 2015-09-29 2018-06-08 日本电信电话株式会社 半导体激光器装置
US10333280B2 (en) 2015-09-29 2019-06-25 Nippon Telegraph And Telephone Corporation Semiconductor laser device
CN108141006B (zh) * 2015-09-29 2020-09-15 日本电信电话株式会社 半导体激光器装置

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