JPS6443702A - Interferometer - Google Patents

Interferometer

Info

Publication number
JPS6443702A
JPS6443702A JP20025387A JP20025387A JPS6443702A JP S6443702 A JPS6443702 A JP S6443702A JP 20025387 A JP20025387 A JP 20025387A JP 20025387 A JP20025387 A JP 20025387A JP S6443702 A JPS6443702 A JP S6443702A
Authority
JP
Japan
Prior art keywords
semiconductor laser
interferometer
light source
laser
temperature variation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20025387A
Other languages
Japanese (ja)
Inventor
Osamu Yokoyama
Tomio Sonehara
Kunihiro Inoue
Hiroshi Komatsu
Katsuhiro Teraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20025387A priority Critical patent/JPS6443702A/en
Publication of JPS6443702A publication Critical patent/JPS6443702A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)

Abstract

PURPOSE:To obtain a miniaturized, accurate interferometer by using what is called a surface light emission type semiconductor laser as a light source. CONSTITUTION:The semiconductor laser 10 uses parts of thin films 21 and 22 formed on the surface of a substrate 24 where the laser 10 is formed as an active area 20 and light 23 is emitted from the area. The length L of a resonator constituting the laser is reducible to several mum, the oscillation spectrum of possible oscillation wavelengths is single, and a jump among the possible oscillation wavelengths, i.e. mode hopping is not caused even in case of temperature variation, etc. Therefore, the surface light emission type semiconductor laser like this is used as the light source to enable the light source of 5mm in diameter and about 5mm in height, so the interferometer is reduced in size on the whole and the semiconductor laser has no wavelength jump regardless of temperature variation, etc., so the high-accuracy interferometer can be constituted.
JP20025387A 1987-08-11 1987-08-11 Interferometer Pending JPS6443702A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20025387A JPS6443702A (en) 1987-08-11 1987-08-11 Interferometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20025387A JPS6443702A (en) 1987-08-11 1987-08-11 Interferometer

Publications (1)

Publication Number Publication Date
JPS6443702A true JPS6443702A (en) 1989-02-16

Family

ID=16421305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20025387A Pending JPS6443702A (en) 1987-08-11 1987-08-11 Interferometer

Country Status (1)

Country Link
JP (1) JPS6443702A (en)

Similar Documents

Publication Publication Date Title
EP0404551A3 (en) Optical semiconductor device
JPS6414984A (en) Semiconductor laser device oscilating at single-wavelength
US4803695A (en) Semiconductor laser apparatus having an external reflecting means
JPS5660088A (en) Multiwavelength light source
JPS6443702A (en) Interferometer
JPS6446995A (en) Semiconductor laser light source apparatus
Ikushima et al. Lasing spectra of semiconductor lasers coupled to an optical fiber
JPS60207389A (en) Semiconductor laser device
JPS6425587A (en) Integrated semiconductor laser
US4811350A (en) Semiconductor laser apparatus
JPS5595389A (en) Semiconductor laser device
JPS6457211A (en) Optical device
JPS5263087A (en) Semiconductor laser device
JPS6424482A (en) Semiconductor laser
SHIGETO et al. Laser diode array
JPS6412202A (en) Semiconductor laser length measuring apparatus
Camparo et al. Anomalous tuning of single mode AlGaAs diode lasers
JPS6425588A (en) Integrated semiconductor laser
WO2003012370A3 (en) Wavelength tunable ring lasers
JPS537185A (en) Semiconductor laser device
JPS55107289A (en) Semiconductor laser device
JPS57180191A (en) Laser for wide range of wavelength
JPS57170585A (en) Semiconductor laser device
JPS6418286A (en) Semiconductor laser device
SE9001903D0 (en) LASER