JPS644668B2 - - Google Patents
Info
- Publication number
- JPS644668B2 JPS644668B2 JP57230399A JP23039982A JPS644668B2 JP S644668 B2 JPS644668 B2 JP S644668B2 JP 57230399 A JP57230399 A JP 57230399A JP 23039982 A JP23039982 A JP 23039982A JP S644668 B2 JPS644668 B2 JP S644668B2
- Authority
- JP
- Japan
- Prior art keywords
- plate
- copper
- copper plate
- ceramic plate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 42
- 229910052802 copper Inorganic materials 0.000 claims description 42
- 239000010949 copper Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 16
- 229910052575 non-oxide ceramic Inorganic materials 0.000 claims description 11
- 239000011225 non-oxide ceramic Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011224 oxide ceramic Substances 0.000 description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- -1 and as is well known Inorganic materials 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57230399A JPS59150453A (ja) | 1982-12-23 | 1982-12-23 | 半導体モジユ−ル用基板の製造方法 |
| US06/558,583 US4540462A (en) | 1982-12-23 | 1983-12-06 | Substrate for semiconductor modules and method of manufacture |
| EP83307762A EP0115158B1 (en) | 1982-12-23 | 1983-12-20 | Substrate for semiconductor module |
| DE8383307762T DE3378009D1 (en) | 1982-12-23 | 1983-12-20 | Substrate for semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57230399A JPS59150453A (ja) | 1982-12-23 | 1982-12-23 | 半導体モジユ−ル用基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59150453A JPS59150453A (ja) | 1984-08-28 |
| JPS644668B2 true JPS644668B2 (US07223432-20070529-C00017.png) | 1989-01-26 |
Family
ID=16907265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57230399A Granted JPS59150453A (ja) | 1982-12-23 | 1982-12-23 | 半導体モジユ−ル用基板の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4540462A (US07223432-20070529-C00017.png) |
| EP (1) | EP0115158B1 (US07223432-20070529-C00017.png) |
| JP (1) | JPS59150453A (US07223432-20070529-C00017.png) |
| DE (1) | DE3378009D1 (US07223432-20070529-C00017.png) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0097944B1 (en) * | 1982-06-29 | 1988-06-01 | Kabushiki Kaisha Toshiba | Method for directly bonding ceramic and metal members and laminated body of the same |
| JPS6184037A (ja) * | 1984-09-30 | 1986-04-28 | Toshiba Corp | 窒化アルミニウム系セラミツクス基板 |
| US4828961A (en) * | 1986-07-02 | 1989-05-09 | W. R. Grace & Co.-Conn. | Imaging process for forming ceramic electronic circuits |
| GB2194477A (en) * | 1986-08-28 | 1988-03-09 | Stc Plc | Solder joint |
| US4698132A (en) * | 1986-09-30 | 1987-10-06 | Rca Corporation | Method of forming tapered contact openings |
| JPS63119242A (ja) * | 1986-11-07 | 1988-05-23 | Toshiba Corp | 基板 |
| US4911785A (en) * | 1987-02-04 | 1990-03-27 | Andus Corporation | The method of forming a thin film artwork compounds |
| JPH01241193A (ja) * | 1988-03-23 | 1989-09-26 | Toshiba Corp | セラミックス基板 |
| JPH01249669A (ja) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | セラミックス回路基板 |
| JP2755594B2 (ja) * | 1988-03-30 | 1998-05-20 | 株式会社 東芝 | セラミックス回路基板 |
| JPH0632354B2 (ja) * | 1988-03-31 | 1994-04-27 | 株式会社住友金属セラミックス | セラミック回路基板およびセラミック回路基板の製造方法 |
| EP0480038B1 (en) * | 1990-04-16 | 1997-07-09 | Denki Kagaku Kogyo Kabushiki Kaisha | Ceramic circuit board |
| EP0481308B1 (en) * | 1990-10-05 | 1996-12-18 | Kabushiki Kaisha Toshiba | Method of manufacturing ceramics circuit board |
| JPH05166969A (ja) * | 1991-10-14 | 1993-07-02 | Fuji Electric Co Ltd | 半導体装置 |
| US5399239A (en) * | 1992-12-18 | 1995-03-21 | Ceridian Corporation | Method of fabricating conductive structures on substrates |
| AT402135B (de) * | 1994-03-30 | 1997-02-25 | Electrovac | Schaltungsträger |
| JP3529055B2 (ja) * | 1994-05-18 | 2004-05-24 | 電気化学工業株式会社 | 絶縁放熱板 |
| US5675181A (en) * | 1995-01-19 | 1997-10-07 | Fuji Electric Co., Ltd. | Zirconia-added alumina substrate with direct bonding of copper |
| JP3176815B2 (ja) * | 1995-01-19 | 2001-06-18 | 富士電機株式会社 | 半導体装置用基板 |
| EP0999589B2 (en) * | 1995-03-20 | 2013-11-13 | Kabushiki Kaisha Toshiba | Silicon nitride circuit board |
| JPH09153568A (ja) * | 1995-09-28 | 1997-06-10 | Toshiba Corp | 窒化珪素セラミック回路基板および半導体装置 |
| JPH09153567A (ja) * | 1995-09-28 | 1997-06-10 | Toshiba Corp | 高熱伝導性窒化珪素回路基板および半導体装置 |
| US5889234A (en) * | 1996-11-21 | 1999-03-30 | Eastman Kodak Company | Zirconia ceramic members with laser induced electrical conductivity in surfaces thereof |
| US6107638A (en) * | 1997-03-14 | 2000-08-22 | Kabushiki Kaisha Toshiba | Silicon nitride circuit substrate and semiconductor device containing same |
| JP2000128654A (ja) * | 1998-10-28 | 2000-05-09 | Sumitomo Electric Ind Ltd | 窒化ケイ素複合基板 |
| AT408345B (de) * | 1999-11-17 | 2001-10-25 | Electrovac | Verfahren zur festlegung eines aus metall-matrix- composite-(mmc-) materiales gebildeten körpers auf einem keramischen körper |
| US20070231590A1 (en) * | 2006-03-31 | 2007-10-04 | Stellar Industries Corp. | Method of Bonding Metals to Ceramics |
| TW201118940A (en) * | 2009-11-20 | 2011-06-01 | Holy Stone Entpr Co Ltd | Ceramic substrate manufacturing method |
| TW201118059A (en) * | 2009-11-20 | 2011-06-01 | Holy Stone Entpr Co Ltd | Manufacturing process for high precision ceramic substrate |
| JP6056446B2 (ja) * | 2012-12-17 | 2017-01-11 | 三菱マテリアル株式会社 | パワーモジュール用基板の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328145A (en) * | 1962-03-05 | 1967-06-27 | English Electric Co Ltd | Method of making bonded metalceramic elements |
| US3766634A (en) * | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
| US3911553A (en) * | 1974-03-04 | 1975-10-14 | Gen Electric | Method for bonding metal to ceramic |
| US3994430A (en) * | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
| US4269641A (en) * | 1978-11-10 | 1981-05-26 | Agency Of Industrial Science And Technology | Method for adhesion of ceramics |
| JPS5810880B2 (ja) * | 1979-08-30 | 1983-02-28 | 株式会社村田製作所 | 銅被膜の密着性向上方法 |
| DE3036128C2 (de) * | 1980-09-25 | 1983-08-18 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten Verbinden von Kupferfolien mit Oxidkeramiksubstraten |
-
1982
- 1982-12-23 JP JP57230399A patent/JPS59150453A/ja active Granted
-
1983
- 1983-12-06 US US06/558,583 patent/US4540462A/en not_active Expired - Lifetime
- 1983-12-20 EP EP83307762A patent/EP0115158B1/en not_active Expired
- 1983-12-20 DE DE8383307762T patent/DE3378009D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0115158A3 (en) | 1984-08-29 |
| EP0115158B1 (en) | 1988-09-14 |
| EP0115158A2 (en) | 1984-08-08 |
| US4540462A (en) | 1985-09-10 |
| JPS59150453A (ja) | 1984-08-28 |
| DE3378009D1 (en) | 1988-10-20 |
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