JPS6445168A - Manufacture of high breakdown voltage semiconductor element - Google Patents
Manufacture of high breakdown voltage semiconductor elementInfo
- Publication number
- JPS6445168A JPS6445168A JP20098887A JP20098887A JPS6445168A JP S6445168 A JPS6445168 A JP S6445168A JP 20098887 A JP20098887 A JP 20098887A JP 20098887 A JP20098887 A JP 20098887A JP S6445168 A JPS6445168 A JP S6445168A
- Authority
- JP
- Japan
- Prior art keywords
- bevel
- breakdown voltage
- speed type
- high breakdown
- junction surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015556 catabolic process Effects 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20098887A JPS6445168A (en) | 1987-08-13 | 1987-08-13 | Manufacture of high breakdown voltage semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20098887A JPS6445168A (en) | 1987-08-13 | 1987-08-13 | Manufacture of high breakdown voltage semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6445168A true JPS6445168A (en) | 1989-02-17 |
Family
ID=16433638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20098887A Pending JPS6445168A (en) | 1987-08-13 | 1987-08-13 | Manufacture of high breakdown voltage semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6445168A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5100809A (en) * | 1990-02-22 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device |
WO2012004147A1 (de) * | 2010-07-06 | 2012-01-12 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements |
-
1987
- 1987-08-13 JP JP20098887A patent/JPS6445168A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5100809A (en) * | 1990-02-22 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device |
WO2012004147A1 (de) * | 2010-07-06 | 2012-01-12 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements |
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