JPS6437028A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS6437028A
JPS6437028A JP19268587A JP19268587A JPS6437028A JP S6437028 A JPS6437028 A JP S6437028A JP 19268587 A JP19268587 A JP 19268587A JP 19268587 A JP19268587 A JP 19268587A JP S6437028 A JPS6437028 A JP S6437028A
Authority
JP
Japan
Prior art keywords
ammonia gas
substrate
prescribed
interior
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19268587A
Other languages
English (en)
Other versions
JP2560038B2 (ja
Inventor
Sugiro Shimoda
Masatoshi Utaka
Isamu Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Priority to JP62192685A priority Critical patent/JP2560038B2/ja
Publication of JPS6437028A publication Critical patent/JPS6437028A/ja
Application granted granted Critical
Publication of JP2560038B2 publication Critical patent/JP2560038B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP62192685A 1987-08-03 1987-08-03 半導体素子の製造方法 Expired - Fee Related JP2560038B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192685A JP2560038B2 (ja) 1987-08-03 1987-08-03 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192685A JP2560038B2 (ja) 1987-08-03 1987-08-03 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6437028A true JPS6437028A (en) 1989-02-07
JP2560038B2 JP2560038B2 (ja) 1996-12-04

Family

ID=16295343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192685A Expired - Fee Related JP2560038B2 (ja) 1987-08-03 1987-08-03 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JP2560038B2 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107570A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59107571A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
JPS59107569A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
JPS59158552A (ja) * 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd 半導体光検出装置
US5461242A (en) * 1992-11-06 1995-10-24 Toyo Denki Seizo Kabushiki Kaisha Insulated gate static induction thyristor with a split gate type shorted cathode structure
WO2024029271A1 (ja) * 2022-08-02 2024-02-08 東京エレクトロン株式会社 ＳｉＮ膜の形成方法及びプラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136937A (ja) * 1984-07-30 1986-02-21 Matsushita Electronics Corp 半導体装置の製造方法
JPS62172732A (ja) * 1986-01-24 1987-07-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136937A (ja) * 1984-07-30 1986-02-21 Matsushita Electronics Corp 半導体装置の製造方法
JPS62172732A (ja) * 1986-01-24 1987-07-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107570A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59107571A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
JPS59107569A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
JPS59158552A (ja) * 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd 半導体光検出装置
US5461242A (en) * 1992-11-06 1995-10-24 Toyo Denki Seizo Kabushiki Kaisha Insulated gate static induction thyristor with a split gate type shorted cathode structure
WO2024029271A1 (ja) * 2022-08-02 2024-02-08 東京エレクトロン株式会社 ＳｉＮ膜の形成方法及びプラズマ処理装置

Also Published As

Publication number Publication date
JP2560038B2 (ja) 1996-12-04

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Legal Events

Date Code Title Description
R250 Receipt of annual fees

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LAPS Cancellation because of no payment of annual fees