JPS6432686A - Manufacture of avalanche type semiconductor photodetector - Google Patents

Manufacture of avalanche type semiconductor photodetector

Info

Publication number
JPS6432686A
JPS6432686A JP62189841A JP18984187A JPS6432686A JP S6432686 A JPS6432686 A JP S6432686A JP 62189841 A JP62189841 A JP 62189841A JP 18984187 A JP18984187 A JP 18984187A JP S6432686 A JPS6432686 A JP S6432686A
Authority
JP
Japan
Prior art keywords
type semiconductor
type
semiconductor photodetector
avalanche
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62189841A
Other languages
Japanese (ja)
Other versions
JP2666841B2 (en
Inventor
Kikuo Makita
Takuo Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62189841A priority Critical patent/JP2666841B2/en
Publication of JPS6432686A publication Critical patent/JPS6432686A/en
Application granted granted Critical
Publication of JP2666841B2 publication Critical patent/JP2666841B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an avalanche type semiconductor photodetector having excellent characteristics by forming the basic structure of the avalanche type semiconductor photodetector onto an InP substrate having a surface azimuth inclined from (100) by 0.2-0.5 deg.. CONSTITUTION:An N-type InP buffer layer 2, an N-type InxGa1-xAs (X=0.53) optical absorption layer 3, an N-type InxGa1-xAsyP1-y layer 4, an N-type InP avalanche layer 5 and an N-type InP cap layer 6 arc shaped onto a substrate 1. A substrate having a surface azimuth inclined from (100) by 0.2-0.5 deg. is used as the substrate 1 at that time. Consequently, the generation of a hillock is inhibited, and uniform layer thickness is acquired in a wafer. Accordingly, an avalanche type semiconductor photodetector having excellent characteristics is obtained.
JP62189841A 1987-07-28 1987-07-28 Manufacturing method of avalanche type semiconductor light receiving element Expired - Lifetime JP2666841B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62189841A JP2666841B2 (en) 1987-07-28 1987-07-28 Manufacturing method of avalanche type semiconductor light receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62189841A JP2666841B2 (en) 1987-07-28 1987-07-28 Manufacturing method of avalanche type semiconductor light receiving element

Publications (2)

Publication Number Publication Date
JPS6432686A true JPS6432686A (en) 1989-02-02
JP2666841B2 JP2666841B2 (en) 1997-10-22

Family

ID=16248101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62189841A Expired - Lifetime JP2666841B2 (en) 1987-07-28 1987-07-28 Manufacturing method of avalanche type semiconductor light receiving element

Country Status (1)

Country Link
JP (1) JP2666841B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector
EP0701008A2 (en) 1994-09-08 1996-03-13 Sumitomo Electric Industries, Limited Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269689A (en) * 1985-09-24 1987-03-30 Toshiba Corp Semiconductor photodetector
JPS6284522A (en) * 1985-10-08 1987-04-18 Nec Corp Surface protective film structure of iii-v compound semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269689A (en) * 1985-09-24 1987-03-30 Toshiba Corp Semiconductor photodetector
JPS6284522A (en) * 1985-10-08 1987-04-18 Nec Corp Surface protective film structure of iii-v compound semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector
EP0701008A2 (en) 1994-09-08 1996-03-13 Sumitomo Electric Industries, Limited Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
EP0701008A3 (en) * 1994-09-08 1996-06-26 Sumitomo Electric Industries Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
US5647917A (en) * 1994-09-08 1997-07-15 Sumitomo Electric Industries, Ltd. Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth

Also Published As

Publication number Publication date
JP2666841B2 (en) 1997-10-22

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