JPS6432686A - Manufacture of avalanche type semiconductor photodetector - Google Patents
Manufacture of avalanche type semiconductor photodetectorInfo
- Publication number
- JPS6432686A JPS6432686A JP62189841A JP18984187A JPS6432686A JP S6432686 A JPS6432686 A JP S6432686A JP 62189841 A JP62189841 A JP 62189841A JP 18984187 A JP18984187 A JP 18984187A JP S6432686 A JPS6432686 A JP S6432686A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- type
- semiconductor photodetector
- avalanche
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To obtain an avalanche type semiconductor photodetector having excellent characteristics by forming the basic structure of the avalanche type semiconductor photodetector onto an InP substrate having a surface azimuth inclined from (100) by 0.2-0.5 deg.. CONSTITUTION:An N-type InP buffer layer 2, an N-type InxGa1-xAs (X=0.53) optical absorption layer 3, an N-type InxGa1-xAsyP1-y layer 4, an N-type InP avalanche layer 5 and an N-type InP cap layer 6 arc shaped onto a substrate 1. A substrate having a surface azimuth inclined from (100) by 0.2-0.5 deg. is used as the substrate 1 at that time. Consequently, the generation of a hillock is inhibited, and uniform layer thickness is acquired in a wafer. Accordingly, an avalanche type semiconductor photodetector having excellent characteristics is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62189841A JP2666841B2 (en) | 1987-07-28 | 1987-07-28 | Manufacturing method of avalanche type semiconductor light receiving element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62189841A JP2666841B2 (en) | 1987-07-28 | 1987-07-28 | Manufacturing method of avalanche type semiconductor light receiving element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6432686A true JPS6432686A (en) | 1989-02-02 |
JP2666841B2 JP2666841B2 (en) | 1997-10-22 |
Family
ID=16248101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62189841A Expired - Lifetime JP2666841B2 (en) | 1987-07-28 | 1987-07-28 | Manufacturing method of avalanche type semiconductor light receiving element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2666841B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992386A (en) * | 1988-12-14 | 1991-02-12 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor light detector |
EP0701008A2 (en) | 1994-09-08 | 1996-03-13 | Sumitomo Electric Industries, Limited | Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269689A (en) * | 1985-09-24 | 1987-03-30 | Toshiba Corp | Semiconductor photodetector |
JPS6284522A (en) * | 1985-10-08 | 1987-04-18 | Nec Corp | Surface protective film structure of iii-v compound semiconductor |
-
1987
- 1987-07-28 JP JP62189841A patent/JP2666841B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269689A (en) * | 1985-09-24 | 1987-03-30 | Toshiba Corp | Semiconductor photodetector |
JPS6284522A (en) * | 1985-10-08 | 1987-04-18 | Nec Corp | Surface protective film structure of iii-v compound semiconductor |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992386A (en) * | 1988-12-14 | 1991-02-12 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor light detector |
EP0701008A2 (en) | 1994-09-08 | 1996-03-13 | Sumitomo Electric Industries, Limited | Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
EP0701008A3 (en) * | 1994-09-08 | 1996-06-26 | Sumitomo Electric Industries | Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
US5647917A (en) * | 1994-09-08 | 1997-07-15 | Sumitomo Electric Industries, Ltd. | Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
Also Published As
Publication number | Publication date |
---|---|
JP2666841B2 (en) | 1997-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080627 Year of fee payment: 11 |