JPS6432651A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6432651A JPS6432651A JP18753887A JP18753887A JPS6432651A JP S6432651 A JPS6432651 A JP S6432651A JP 18753887 A JP18753887 A JP 18753887A JP 18753887 A JP18753887 A JP 18753887A JP S6432651 A JPS6432651 A JP S6432651A
- Authority
- JP
- Japan
- Prior art keywords
- connecting hole
- wiring electrode
- substrate
- glass film
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent adhesion on the surface of a substrate of outward diffused boron and phosphorus, and to obtain the excellent connection of a wiring electrode by heating and fluidizing a borophosphate glass film under the state in which an inter-layer oxide film through a vapor growth method is left on the bottom of a connecting hole. CONSTITUTION:A connecting hole 17 for forming a wiring electrode is bored to a borophosphate glass film 15 as an upper layer so that an inter-layer oxide film 12 to which an impurity such as boron, phosphorus, etc., is not added is left on a semiconductor substrate 11. The glass film 15 is fluidized through heat treatment a high temperature, and the periphery of the connecting hole 17 is smoothed. Anisotropic whole-surface etching is executed to the glass film 15, and the main surface of the substrate 11 is exposed only in the region of the connecting hole 17. A wiring electrode 18 is shaped into the connecting hole 17. Accordingly, adhesion onto the surface of the substrate 11 of outward diffused boron and phosphorus is prevented, thus acquiring the excellent connection of the wiring electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18753887A JPS6432651A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18753887A JPS6432651A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432651A true JPS6432651A (en) | 1989-02-02 |
Family
ID=16207841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18753887A Pending JPS6432651A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432651A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0377321A (en) * | 1989-08-19 | 1991-04-02 | Fuji Electric Co Ltd | Formation of electrode connecting hole in semiconductor device |
| US5292684A (en) * | 1992-03-28 | 1994-03-08 | Hyundai Electronics Industries Co., Ltd. | Semiconductor device with improved contact and method of making the same |
| JP2007329279A (en) * | 2006-06-07 | 2007-12-20 | Denso Corp | Method for manufacturing semiconductor device |
-
1987
- 1987-07-29 JP JP18753887A patent/JPS6432651A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0377321A (en) * | 1989-08-19 | 1991-04-02 | Fuji Electric Co Ltd | Formation of electrode connecting hole in semiconductor device |
| US5292684A (en) * | 1992-03-28 | 1994-03-08 | Hyundai Electronics Industries Co., Ltd. | Semiconductor device with improved contact and method of making the same |
| JP2007329279A (en) * | 2006-06-07 | 2007-12-20 | Denso Corp | Method for manufacturing semiconductor device |
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