JPS6430849U - - Google Patents
Info
- Publication number
- JPS6430849U JPS6430849U JP12700487U JP12700487U JPS6430849U JP S6430849 U JPS6430849 U JP S6430849U JP 12700487 U JP12700487 U JP 12700487U JP 12700487 U JP12700487 U JP 12700487U JP S6430849 U JPS6430849 U JP S6430849U
- Authority
- JP
- Japan
- Prior art keywords
- glass
- electrodes
- heat sink
- semiconductor element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 1
- 239000000843 powder Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
第1図は本考案によるDHD型ガラスパツシベ
ーシヨン半導体装置の一実施例の断面図、第2図
は本考案の他の実施例の断面図、第4図は従来の
DHD型ガラスパツシベーシヨン半導体装置の断
面図である。第3図a,b,cは本考案の実施例
を達成するためのガラス粉末成形方法を示す断面
図である。
1……半導体素子、2a,2b……金属蒸着膜
、3a,3b……電極、4a,4b……電極リー
ド線、5a,5b……溶接部、6……ガラス、7
a,7b……ロウ接部、8,81,82,83…
…ガラス粉末。
FIG. 1 is a sectional view of one embodiment of a DHD type glass package semiconductor device according to the present invention, FIG. 2 is a sectional view of another embodiment of the present invention, and FIG. 4 is a sectional view of a conventional DHD type glass package semiconductor device. 1 is a cross-sectional view of a basing semiconductor device. FIGS. 3a, 3b and 3c are cross-sectional views showing a glass powder molding method for achieving an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Semiconductor element, 2a, 2b... Metal vapor deposition film, 3a, 3b... Electrode, 4a, 4b... Electrode lead wire, 5a, 5b... Welding part, 6... Glass, 7
a, 7b...Raw contact, 8, 81, 82, 83...
...Glass powder.
Claims (1)
個の電極の一端が接続され、更に前記2個の電極
の他端には電極リード線がそれぞれ配置されてお
り、前記半導体素子の外周部及び前記2個の電極
をガラスで覆つたダブルヒートシンク型のガラス
パツシベーシヨン半導体装置において、前記ガラ
スの外形を繭形に成形したことを特徴とする半導
体装置。 2 which also serves as a heat sink on both main surfaces of the semiconductor element
One end of the two electrodes is connected, and an electrode lead wire is arranged at the other end of the two electrodes, and the outer periphery of the semiconductor element and the two electrodes are covered with glass to form a double heat sink type. 1. A glass packaging semiconductor device characterized in that the outer shape of the glass is formed into a cocoon shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12700487U JPS6430849U (en) | 1987-08-20 | 1987-08-20 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12700487U JPS6430849U (en) | 1987-08-20 | 1987-08-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6430849U true JPS6430849U (en) | 1989-02-27 |
Family
ID=31379033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12700487U Pending JPS6430849U (en) | 1987-08-20 | 1987-08-20 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6430849U (en) |
-
1987
- 1987-08-20 JP JP12700487U patent/JPS6430849U/ja active Pending