JPS6430849U - - Google Patents

Info

Publication number
JPS6430849U
JPS6430849U JP12700487U JP12700487U JPS6430849U JP S6430849 U JPS6430849 U JP S6430849U JP 12700487 U JP12700487 U JP 12700487U JP 12700487 U JP12700487 U JP 12700487U JP S6430849 U JPS6430849 U JP S6430849U
Authority
JP
Japan
Prior art keywords
glass
electrodes
heat sink
semiconductor element
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12700487U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12700487U priority Critical patent/JPS6430849U/ja
Publication of JPS6430849U publication Critical patent/JPS6430849U/ja
Pending legal-status Critical Current

Links

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案によるDHD型ガラスパツシベ
ーシヨン半導体装置の一実施例の断面図、第2図
は本考案の他の実施例の断面図、第4図は従来の
DHD型ガラスパツシベーシヨン半導体装置の断
面図である。第3図a,b,cは本考案の実施例
を達成するためのガラス粉末成形方法を示す断面
図である。 1……半導体素子、2a,2b……金属蒸着膜
、3a,3b……電極、4a,4b……電極リー
ド線、5a,5b……溶接部、6……ガラス、7
a,7b……ロウ接部、8,81,82,83…
…ガラス粉末。
FIG. 1 is a sectional view of one embodiment of a DHD type glass package semiconductor device according to the present invention, FIG. 2 is a sectional view of another embodiment of the present invention, and FIG. 4 is a sectional view of a conventional DHD type glass package semiconductor device. 1 is a cross-sectional view of a basing semiconductor device. FIGS. 3a, 3b and 3c are cross-sectional views showing a glass powder molding method for achieving an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Semiconductor element, 2a, 2b... Metal vapor deposition film, 3a, 3b... Electrode, 4a, 4b... Electrode lead wire, 5a, 5b... Welding part, 6... Glass, 7
a, 7b...Raw contact, 8, 81, 82, 83...
...Glass powder.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体素子の両主面にヒートシンクを兼ねた2
個の電極の一端が接続され、更に前記2個の電極
の他端には電極リード線がそれぞれ配置されてお
り、前記半導体素子の外周部及び前記2個の電極
をガラスで覆つたダブルヒートシンク型のガラス
パツシベーシヨン半導体装置において、前記ガラ
スの外形を繭形に成形したことを特徴とする半導
体装置。
2 which also serves as a heat sink on both main surfaces of the semiconductor element
One end of the two electrodes is connected, and an electrode lead wire is arranged at the other end of the two electrodes, and the outer periphery of the semiconductor element and the two electrodes are covered with glass to form a double heat sink type. 1. A glass packaging semiconductor device characterized in that the outer shape of the glass is formed into a cocoon shape.
JP12700487U 1987-08-20 1987-08-20 Pending JPS6430849U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12700487U JPS6430849U (en) 1987-08-20 1987-08-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12700487U JPS6430849U (en) 1987-08-20 1987-08-20

Publications (1)

Publication Number Publication Date
JPS6430849U true JPS6430849U (en) 1989-02-27

Family

ID=31379033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12700487U Pending JPS6430849U (en) 1987-08-20 1987-08-20

Country Status (1)

Country Link
JP (1) JPS6430849U (en)

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