JPS643070B2 - - Google Patents

Info

Publication number
JPS643070B2
JPS643070B2 JP54063910A JP6391079A JPS643070B2 JP S643070 B2 JPS643070 B2 JP S643070B2 JP 54063910 A JP54063910 A JP 54063910A JP 6391079 A JP6391079 A JP 6391079A JP S643070 B2 JPS643070 B2 JP S643070B2
Authority
JP
Japan
Prior art keywords
region
mask
substrate
forming
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54063910A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55156369A (en
Inventor
Jun Sugiura
Kazuhiro Komori
Yasunobu Osa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6391079A priority Critical patent/JPS55156369A/ja
Publication of JPS55156369A publication Critical patent/JPS55156369A/ja
Publication of JPS643070B2 publication Critical patent/JPS643070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP6391079A 1979-05-25 1979-05-25 Manufacture of semiconductor device Granted JPS55156369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6391079A JPS55156369A (en) 1979-05-25 1979-05-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6391079A JPS55156369A (en) 1979-05-25 1979-05-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55156369A JPS55156369A (en) 1980-12-05
JPS643070B2 true JPS643070B2 (OSRAM) 1989-01-19

Family

ID=13242952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6391079A Granted JPS55156369A (en) 1979-05-25 1979-05-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55156369A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
US4795719A (en) * 1984-05-15 1989-01-03 Waferscale Integration, Inc. Self-aligned split gate eprom process
US4639893A (en) * 1984-05-15 1987-01-27 Wafer Scale Integration, Inc. Self-aligned split gate EPROM
US4780424A (en) * 1987-09-28 1988-10-25 Intel Corporation Process for fabricating electrically alterable floating gate memory devices

Also Published As

Publication number Publication date
JPS55156369A (en) 1980-12-05

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