JPS6430234A - Apparatus for manufacturing semiconductor device - Google Patents

Apparatus for manufacturing semiconductor device

Info

Publication number
JPS6430234A
JPS6430234A JP18720287A JP18720287A JPS6430234A JP S6430234 A JPS6430234 A JP S6430234A JP 18720287 A JP18720287 A JP 18720287A JP 18720287 A JP18720287 A JP 18720287A JP S6430234 A JPS6430234 A JP S6430234A
Authority
JP
Japan
Prior art keywords
good
film
gas
oxide film
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18720287A
Other languages
English (en)
Inventor
Masayuki Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP18720287A priority Critical patent/JPS6430234A/ja
Publication of JPS6430234A publication Critical patent/JPS6430234A/ja
Pending legal-status Critical Current

Links

JP18720287A 1987-07-27 1987-07-27 Apparatus for manufacturing semiconductor device Pending JPS6430234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18720287A JPS6430234A (en) 1987-07-27 1987-07-27 Apparatus for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18720287A JPS6430234A (en) 1987-07-27 1987-07-27 Apparatus for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS6430234A true JPS6430234A (en) 1989-02-01

Family

ID=16201879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18720287A Pending JPS6430234A (en) 1987-07-27 1987-07-27 Apparatus for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS6430234A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998058704A1 (fr) 1997-06-25 1998-12-30 Fujikura Ltd. Feuille ignifuge, son procede d'elaboration et structure de protection contre le feu
WO2005020309A1 (ja) * 2003-08-26 2005-03-03 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
WO2011152510A1 (ja) * 2010-06-04 2011-12-08 信越化学工業株式会社 熱処理炉

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998058704A1 (fr) 1997-06-25 1998-12-30 Fujikura Ltd. Feuille ignifuge, son procede d'elaboration et structure de protection contre le feu
WO2005020309A1 (ja) * 2003-08-26 2005-03-03 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
KR100766196B1 (ko) * 2003-08-26 2007-10-10 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
KR100771782B1 (ko) * 2003-08-26 2007-10-30 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US7534730B2 (en) 2003-08-26 2009-05-19 Hitachi Kokusai Electric In. Producing method of semiconductor device and substrate processing apparatus
US7871938B2 (en) 2003-08-26 2011-01-18 Hitachi Kokusai Electric Inc. Producing method of semiconductor device and substrate processing apparatus
US8084369B2 (en) 2003-08-26 2011-12-27 Hitachi Kokusai Electric, Inc. Producing method of semiconductor device and substrate processing apparatus
WO2011152510A1 (ja) * 2010-06-04 2011-12-08 信越化学工業株式会社 熱処理炉
JP2012015501A (ja) * 2010-06-04 2012-01-19 Shin Etsu Chem Co Ltd 熱処理炉
CN103038865A (zh) * 2010-06-04 2013-04-10 信越化学工业株式会社 热处理炉
US9799535B2 (en) 2010-06-04 2017-10-24 Shin-Etsu Chemical Co., Ltd. Heat-treatment furnace

Similar Documents

Publication Publication Date Title
US4033286A (en) Chemical vapor deposition reactor
JPH0945597A (ja) 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法
JPS6430234A (en) Apparatus for manufacturing semiconductor device
JP3359474B2 (ja) 横型熱処理装置
US3673983A (en) High capacity deposition reactor
JPS6383275A (ja) 被処理体の処理方法
JPS57114228A (en) Reaction boat for depressurized cvd device
JPS5726441A (en) Cvd method and device therefor
JPS6435929A (en) Manufacture of semiconductor device
JPH08316156A (ja) 半導体装置の製造装置
JPH0151051B2 (ja)
JPS551130A (en) Furnace core pipe for manufacturing semiconductor
JPS5598826A (en) Heat treatment jig for semiconductor wafer
JPS6333826A (ja) 低圧酸化装置
JPS57207366A (en) Manufacture of semiconductor device
JPS5753942A (en) Method of oxidation and diffusion
JPS56167324A (en) Manufacture of semiconductor device
JPS57180135A (en) Manufacture of semiconductor device
JPS55154730A (en) Method of diffusing b into si wafer
JPH02205017A (ja) 半導体装置の製造装置
JPS6413721A (en) Formation of thin film
JPS56169322A (en) Selective diffusion of boron into silicon
JPS56142632A (en) Diffusing method for boron
JPS55121634A (en) Diffusing method for impurity
JPS6468919A (en) Core tube of heat treatment furnace for semiconductor wafer