JPS6430227A - Method of etching aluminum in plasma - Google Patents
Method of etching aluminum in plasmaInfo
- Publication number
- JPS6430227A JPS6430227A JP14990588A JP14990588A JPS6430227A JP S6430227 A JPS6430227 A JP S6430227A JP 14990588 A JP14990588 A JP 14990588A JP 14990588 A JP14990588 A JP 14990588A JP S6430227 A JPS6430227 A JP S6430227A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- aluminum
- bromine
- mixture
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6387287A | 1987-06-19 | 1987-06-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6430227A true JPS6430227A (en) | 1989-02-01 |
Family
ID=22052064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14990588A Pending JPS6430227A (en) | 1987-06-19 | 1988-06-17 | Method of etching aluminum in plasma |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0295581A1 (ja) |
JP (1) | JPS6430227A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521400A (ja) * | 1991-07-09 | 1993-01-29 | Handotai Process Kenkyusho:Kk | 半導体装置の製造方法 |
DE69529000T2 (de) * | 1994-03-30 | 2003-08-21 | Matsushita Electric Ind Co Ltd | Verfahren zur Herstellung von Halbleitervorrichtungen mit eingebautem Kondensator |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2312114A1 (fr) * | 1975-05-22 | 1976-12-17 | Ibm | Attaque de materiaux par ions reactifs |
US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
JPS6059994B2 (ja) * | 1979-10-09 | 1985-12-27 | 三菱電機株式会社 | アルミニウム膜またはアルミニウム合金膜の微細パタ−ン形成方法 |
-
1988
- 1988-06-10 EP EP88109250A patent/EP0295581A1/en not_active Withdrawn
- 1988-06-17 JP JP14990588A patent/JPS6430227A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0295581A1 (en) | 1988-12-21 |
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