JPS6425409A - Junction formation of metallic silicide - Google Patents

Junction formation of metallic silicide

Info

Publication number
JPS6425409A
JPS6425409A JP18274287A JP18274287A JPS6425409A JP S6425409 A JPS6425409 A JP S6425409A JP 18274287 A JP18274287 A JP 18274287A JP 18274287 A JP18274287 A JP 18274287A JP S6425409 A JPS6425409 A JP S6425409A
Authority
JP
Japan
Prior art keywords
substrate
single crystal
exposed
silicide
silicon single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18274287A
Other languages
English (en)
Inventor
Katsu Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18274287A priority Critical patent/JPS6425409A/ja
Publication of JPS6425409A publication Critical patent/JPS6425409A/ja
Pending legal-status Critical Current

Links

JP18274287A 1987-07-21 1987-07-21 Junction formation of metallic silicide Pending JPS6425409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18274287A JPS6425409A (en) 1987-07-21 1987-07-21 Junction formation of metallic silicide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18274287A JPS6425409A (en) 1987-07-21 1987-07-21 Junction formation of metallic silicide

Publications (1)

Publication Number Publication Date
JPS6425409A true JPS6425409A (en) 1989-01-27

Family

ID=16123641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18274287A Pending JPS6425409A (en) 1987-07-21 1987-07-21 Junction formation of metallic silicide

Country Status (1)

Country Link
JP (1) JPS6425409A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009108698A (ja) * 2007-10-26 2009-05-21 Otics Corp 動弁装置及び支持部材
US8561586B2 (en) 2008-03-07 2013-10-22 Otics Corporation Rocker arm unit and method of assembling rocker arm unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009108698A (ja) * 2007-10-26 2009-05-21 Otics Corp 動弁装置及び支持部材
US8561586B2 (en) 2008-03-07 2013-10-22 Otics Corporation Rocker arm unit and method of assembling rocker arm unit

Similar Documents

Publication Publication Date Title
JPS56142630A (en) Manufacture of semiconductor device
JPS5430777A (en) Manufacture of semiconductor device
JPS6425409A (en) Junction formation of metallic silicide
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5420671A (en) Production of semiconductor devices
JPS6476736A (en) Manufacture of semiconductor device
JPS5795661A (en) Thin film semiconductor device
JPS6473745A (en) Semiconductor device and manufacture thereof
JPS51118381A (en) Manufacturing process for semiconductor unit
JPS5776832A (en) Method for forming palladium silicide
JPS6455846A (en) Semiconductor device
JPS55138255A (en) Manufacture of semiconductor device
JPS5575240A (en) Method of fabricating semiconductor device
JPS5440073A (en) Film forming method
JPS51113461A (en) A method for manufacturing semiconductor devices
JPS5247370A (en) Diffusion method
EP0380328A3 (en) Process for forming superconducting film
JPS57102052A (en) Manufacture of semiconductor device
KR960016232B1 (en) Metal silicide forming method
JPS54113243A (en) Production of semiconductor device
JPS5267971A (en) Manufacture of integrated circuit wafer
JPS5599771A (en) Manufacture of semiconductor device
JPS6436033A (en) Heat treatment of semiconductor substrate and device therefor
JPS57104225A (en) Manufacture of semiconductor device