JPS6425388A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6425388A
JPS6425388A JP62182672A JP18267287A JPS6425388A JP S6425388 A JPS6425388 A JP S6425388A JP 62182672 A JP62182672 A JP 62182672A JP 18267287 A JP18267287 A JP 18267287A JP S6425388 A JPS6425388 A JP S6425388A
Authority
JP
Japan
Prior art keywords
level
output
logic circuit
high impedance
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62182672A
Other languages
Japanese (ja)
Inventor
Isao Takimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62182672A priority Critical patent/JPS6425388A/en
Publication of JPS6425388A publication Critical patent/JPS6425388A/en
Pending legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To execute the same function as a convention one with a smaller number of transistors by composing a logic circuit to output only two conditions of an 'H' level and a high impedance condition. CONSTITUTION:While a conventional logic circuit outputs the three conditions of the 'H' level, the high impedance (Hi-Z) condition and an 'L' level, the constitution of a logic circuit 3 is made into one whose output terminals WO and the inverse of WO go to the 'H' level or the high impedance condition based on a data input signal and a reading-writing signal. Consequently, the transistors and circuits to output the 'L' level to an output can be reduced. Thus, a semiconductor storage device with the smaller number of elements can be obtained which has the same function as a conventional example.
JP62182672A 1987-07-21 1987-07-21 Semiconductor storage device Pending JPS6425388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182672A JPS6425388A (en) 1987-07-21 1987-07-21 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182672A JPS6425388A (en) 1987-07-21 1987-07-21 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6425388A true JPS6425388A (en) 1989-01-27

Family

ID=16122416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182672A Pending JPS6425388A (en) 1987-07-21 1987-07-21 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6425388A (en)

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