JPS6425390A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6425390A
JPS6425390A JP62182671A JP18267187A JPS6425390A JP S6425390 A JPS6425390 A JP S6425390A JP 62182671 A JP62182671 A JP 62182671A JP 18267187 A JP18267187 A JP 18267187A JP S6425390 A JPS6425390 A JP S6425390A
Authority
JP
Japan
Prior art keywords
goes
level
transistor
conducted
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62182671A
Other languages
Japanese (ja)
Inventor
Isao Takimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62182671A priority Critical patent/JPS6425390A/en
Publication of JPS6425390A publication Critical patent/JPS6425390A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To execute the same function as a conventional one with the smaller number of transistors by composing a logic circuit to output only two conditions of an 'L' level and a high impedance condition. CONSTITUTION:A logic circuit 3 is made into a circuit constitution in which an output terminals WO and the inverse of WO go to the 'L' level or the high impedance condition based on a data input signal and a reading-writing signal R/W. Namely, when the reading-writing signal R/W is at the 'L' level in a reading condition, since, at an inverter circuit Inv1, a transistor Q5 is conducted, a transistor Q6 is not conducted and a node N3 goes to be at an 'H' level, at a NOR circuit 9a, a transistor Q12 goes not to be conducted, a transistor Q14 goes to be conducted and a node N4 goes to be at an 'L' level. As a result, a transistor Q31 goes not to be conducted, and an non-inversion output terminal WO goes to be in the high impedance (Hi-Z) condition. Thus, transistors and circuits for outputting the 'H' level to an output can be reduced, and a semiconductor memory having the same function as a conventional example can be obtained with the smaller number of elements.
JP62182671A 1987-07-21 1987-07-21 Semiconductor storage device Pending JPS6425390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182671A JPS6425390A (en) 1987-07-21 1987-07-21 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182671A JPS6425390A (en) 1987-07-21 1987-07-21 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6425390A true JPS6425390A (en) 1989-01-27

Family

ID=16122399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182671A Pending JPS6425390A (en) 1987-07-21 1987-07-21 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6425390A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039536B2 (en) 2000-03-02 2011-10-18 Sekisui Chemical Co., Ltd. Interlayer film for laminated glass and laminated glass

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039536B2 (en) 2000-03-02 2011-10-18 Sekisui Chemical Co., Ltd. Interlayer film for laminated glass and laminated glass
US8278379B2 (en) 2000-03-02 2012-10-02 Sekisui Chemical Co., Ltd. Interlayer film for laminated glass and laminated glass
US8450405B2 (en) 2000-03-02 2013-05-28 Sekisui Chemical Co., Ltd. Interlayer film for laminated glass and laminated glass

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