JPS6424049A - Etching method - Google Patents

Etching method

Info

Publication number
JPS6424049A
JPS6424049A JP17689187A JP17689187A JPS6424049A JP S6424049 A JPS6424049 A JP S6424049A JP 17689187 A JP17689187 A JP 17689187A JP 17689187 A JP17689187 A JP 17689187A JP S6424049 A JPS6424049 A JP S6424049A
Authority
JP
Japan
Prior art keywords
quartz substrate
pattern mask
targeted
etching
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17689187A
Other languages
Japanese (ja)
Inventor
Takashi Wakatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP17689187A priority Critical patent/JPS6424049A/en
Publication of JPS6424049A publication Critical patent/JPS6424049A/en
Pending legal-status Critical Current

Links

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  • Surface Treatment Of Glass (AREA)

Abstract

PURPOSE:To obtain highly accurate and deep etching of complicated shape at a low cost, by etching after forming film-like diamond on a quartz substrate by a vapor phase synthetic method using pattern mask of targeted shape. CONSTITUTION:The pattern mask having targeted shape is formed on the quartz substrate and the film-like diamond is formed by the microwave plasma CVD method, etc., using CH4 + H2. Then, the pattern mask above-mentioned is cut apart from the quartz substrate to expose the shaped part to be etched. Thereafter, the exposed part is etched by immersing the quartz substrate in an etching agent such as aq. soln. of hydrofluoric acid and by dissolving off the exposed part up to targeted depth.
JP17689187A 1987-07-15 1987-07-15 Etching method Pending JPS6424049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17689187A JPS6424049A (en) 1987-07-15 1987-07-15 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17689187A JPS6424049A (en) 1987-07-15 1987-07-15 Etching method

Publications (1)

Publication Number Publication Date
JPS6424049A true JPS6424049A (en) 1989-01-26

Family

ID=16021559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17689187A Pending JPS6424049A (en) 1987-07-15 1987-07-15 Etching method

Country Status (1)

Country Link
JP (1) JPS6424049A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020222297A1 (en) * 2019-04-28 2020-11-05 Okinawa Institute Of Science And Technology School Corporation Method of fabricating a through glass via on a suspended nanocrystalline diamond

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020222297A1 (en) * 2019-04-28 2020-11-05 Okinawa Institute Of Science And Technology School Corporation Method of fabricating a through glass via on a suspended nanocrystalline diamond

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