JPS6423576A - Mis type field-effect transistor - Google Patents

Mis type field-effect transistor

Info

Publication number
JPS6423576A
JPS6423576A JP18030687A JP18030687A JPS6423576A JP S6423576 A JPS6423576 A JP S6423576A JP 18030687 A JP18030687 A JP 18030687A JP 18030687 A JP18030687 A JP 18030687A JP S6423576 A JPS6423576 A JP S6423576A
Authority
JP
Japan
Prior art keywords
semiconductor layer
plane
gate electrode
distortion
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18030687A
Other languages
Japanese (ja)
Inventor
Koichi Maezawa
Takashi Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP18030687A priority Critical patent/JPS6423576A/en
Publication of JPS6423576A publication Critical patent/JPS6423576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a function as a MISFET even if a gate voltage applied to a gate electrode layer 7 is comparatively lower, by composing a second semiconductor layer which has a plane orientation except a plane (100) in its main plane and has inner distortion. CONSTITUTION:A semiconductor layer 24 is formed in a crystal structure of a zincblende type, and it has a plane bearing with a plane (111) A in its main plane, and besides it has inner distortion and a non-diagonal component of a piezo distortion tensor. Since the semiconductor layer 24 has a lattice constant smaller than a semiconductor layer 23 has, an internal electric field is induced by the semiconductor layer 24 so that electrons are made to move from the side of the semiconductor layer 23 toward the opposite side of the gate electrode layer 7. A height of a barrier of the semiconductor layer 24 is made higher at least than an energy component, which is based on the internal electric field induced by the semiconductor layer 24, and a height of the barrier of the semiconductor layer 4. Hence a function as a MISFET can be obtained with prescribed characteristics even if a gate voltage applied to a gate electrode layer 7 is made high.
JP18030687A 1987-07-20 1987-07-20 Mis type field-effect transistor Pending JPS6423576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18030687A JPS6423576A (en) 1987-07-20 1987-07-20 Mis type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18030687A JPS6423576A (en) 1987-07-20 1987-07-20 Mis type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6423576A true JPS6423576A (en) 1989-01-26

Family

ID=16080903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18030687A Pending JPS6423576A (en) 1987-07-20 1987-07-20 Mis type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6423576A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02192737A (en) * 1989-01-20 1990-07-30 Nec Corp Field effect transistor
US20110233689A1 (en) * 2008-12-08 2011-09-29 Sumitomo Chemical Company, Limited Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02192737A (en) * 1989-01-20 1990-07-30 Nec Corp Field effect transistor
US20110233689A1 (en) * 2008-12-08 2011-09-29 Sumitomo Chemical Company, Limited Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate

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