JPS6419729A - Manufacture of semiconductor wafer - Google Patents

Manufacture of semiconductor wafer

Info

Publication number
JPS6419729A
JPS6419729A JP17571487A JP17571487A JPS6419729A JP S6419729 A JPS6419729 A JP S6419729A JP 17571487 A JP17571487 A JP 17571487A JP 17571487 A JP17571487 A JP 17571487A JP S6419729 A JPS6419729 A JP S6419729A
Authority
JP
Japan
Prior art keywords
wafer
wafers
polished
prescribed thickness
conducted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17571487A
Other languages
English (en)
Other versions
JPH07118473B2 (ja
Inventor
Kazunori Kizaki
Masaharu Ninomiya
Tetsujirou Yoshiharu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KYUSHU ELECTRON METAL
KYUSHU ELECTRON METAL CO Ltd
Osaka Titanium Co Ltd
Original Assignee
KYUSHU ELECTRON METAL
KYUSHU ELECTRON METAL CO Ltd
Osaka Titanium Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KYUSHU ELECTRON METAL, KYUSHU ELECTRON METAL CO Ltd, Osaka Titanium Co Ltd filed Critical KYUSHU ELECTRON METAL
Priority to JP62175714A priority Critical patent/JPH07118473B2/ja
Publication of JPS6419729A publication Critical patent/JPS6419729A/ja
Publication of JPH07118473B2 publication Critical patent/JPH07118473B2/ja
Priority to JP18124198A priority patent/JPH11162909A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
JP62175714A 1987-07-14 1987-07-14 半導体ウエ−ハの製造方法 Expired - Fee Related JPH07118473B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62175714A JPH07118473B2 (ja) 1987-07-14 1987-07-14 半導体ウエ−ハの製造方法
JP18124198A JPH11162909A (ja) 1987-07-14 1998-06-26 半導体ウエーハの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62175714A JPH07118473B2 (ja) 1987-07-14 1987-07-14 半導体ウエ−ハの製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP08304745A Division JP3079203B2 (ja) 1996-11-15 1996-11-15 半導体ウエーハの製造方法
JP18124198A Division JPH11162909A (ja) 1987-07-14 1998-06-26 半導体ウエーハの製造方法

Publications (2)

Publication Number Publication Date
JPS6419729A true JPS6419729A (en) 1989-01-23
JPH07118473B2 JPH07118473B2 (ja) 1995-12-18

Family

ID=16000955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62175714A Expired - Fee Related JPH07118473B2 (ja) 1987-07-14 1987-07-14 半導体ウエ−ハの製造方法

Country Status (1)

Country Link
JP (1) JPH07118473B2 (ja)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01114044A (ja) * 1987-10-28 1989-05-02 Toshiba Corp 半導体基板の製造方法
JPH0236530A (ja) * 1988-07-26 1990-02-06 Naoetsu Denshi Kogyo Kk 半導体ウエハ積層体及びその製造方法並びにディスクリート素子用基板の製造方法
JPH031536A (ja) * 1989-05-29 1991-01-08 Naoetsu Denshi Kogyo Kk シリコン半導体ウエハの切断回収方法
JPH03145727A (ja) * 1989-10-31 1991-06-20 Naoetsu Denshi Kogyo Kk ウエハ枚葉式内周刃２分割切断装置におけるウエハ供給回収装置
JPH03145726A (ja) * 1989-10-31 1991-06-20 Naoetsu Denshi Kogyo Kk ウエハ枚葉式内周刃２分割切断装置におけるウエハ供給回収装置
JPH04162609A (ja) * 1990-10-25 1992-06-08 Naoetsu Denshi Kogyo Kk ディスクリート素子用基板の製造方法
US5154873A (en) * 1989-12-11 1992-10-13 Naoetsu Electronics Company Method and apparatus for mounting slice base on wafer of semiconductor
US6010951A (en) * 1998-04-14 2000-01-04 National Semiconductor Corporation Dual side fabricated semiconductor wafer
JP2002118025A (ja) * 2000-10-05 2002-04-19 Tdk Corp ワイヤソーによる切断方法
US6479382B1 (en) 2001-03-08 2002-11-12 National Semiconductor Corporation Dual-sided semiconductor chip and method for forming the chip with a conductive path through the chip that connects elements on each side of the chip
KR20030030620A (ko) * 2001-10-12 2003-04-18 주식회사 실트론 게터링 수단을 가진 단결정 실리콘 웨이퍼 및 그제조방법
US6677235B1 (en) 2001-12-03 2004-01-13 National Semiconductor Corporation Silicon die with metal feed through structure
JP2004533347A (ja) * 2001-06-13 2004-11-04 フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング 結晶外面に対する結晶面の方位を決定する装置及び方法、及び切断機にて単結晶を切断する装置及び方法
US7005388B1 (en) 2003-12-04 2006-02-28 National Semiconductor Corporation Method of forming through-the-wafer metal interconnect structures
US7109571B1 (en) 2001-12-03 2006-09-19 National Semiconductor Corporation Method of forming a hermetic seal for silicon die with metal feed through structure
US7115973B1 (en) 2001-03-08 2006-10-03 National Semiconductor Corporation Dual-sided semiconductor device with a resistive element that requires little silicon surface area
JP2010098307A (ja) * 2008-10-15 2010-04-30 Siltronic Ag 半導体材料の複合ロッドを複数のウェハに同時に切断する方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55103730A (en) * 1979-01-31 1980-08-08 Ibm Method of forming composite semiconductor substrate
JPS57193349U (ja) * 1981-06-02 1982-12-08

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55103730A (en) * 1979-01-31 1980-08-08 Ibm Method of forming composite semiconductor substrate
JPS57193349U (ja) * 1981-06-02 1982-12-08

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01114044A (ja) * 1987-10-28 1989-05-02 Toshiba Corp 半導体基板の製造方法
JPH0236530A (ja) * 1988-07-26 1990-02-06 Naoetsu Denshi Kogyo Kk 半導体ウエハ積層体及びその製造方法並びにディスクリート素子用基板の製造方法
JPH031536A (ja) * 1989-05-29 1991-01-08 Naoetsu Denshi Kogyo Kk シリコン半導体ウエハの切断回収方法
JPH03145727A (ja) * 1989-10-31 1991-06-20 Naoetsu Denshi Kogyo Kk ウエハ枚葉式内周刃２分割切断装置におけるウエハ供給回収装置
JPH03145726A (ja) * 1989-10-31 1991-06-20 Naoetsu Denshi Kogyo Kk ウエハ枚葉式内周刃２分割切断装置におけるウエハ供給回収装置
US5142756A (en) * 1989-10-31 1992-09-01 Naoetsu Electronics Company Apparatus for loading and re-slicing semiconductor wafer
US5154873A (en) * 1989-12-11 1992-10-13 Naoetsu Electronics Company Method and apparatus for mounting slice base on wafer of semiconductor
JPH04162609A (ja) * 1990-10-25 1992-06-08 Naoetsu Denshi Kogyo Kk ディスクリート素子用基板の製造方法
US6010951A (en) * 1998-04-14 2000-01-04 National Semiconductor Corporation Dual side fabricated semiconductor wafer
JP2002118025A (ja) * 2000-10-05 2002-04-19 Tdk Corp ワイヤソーによる切断方法
US6479382B1 (en) 2001-03-08 2002-11-12 National Semiconductor Corporation Dual-sided semiconductor chip and method for forming the chip with a conductive path through the chip that connects elements on each side of the chip
US6784099B1 (en) 2001-03-08 2004-08-31 National Semiconductor Corporation Dual-sided semiconductor device and method of forming the device with a resistive element that requires little silicon surface area
US7115973B1 (en) 2001-03-08 2006-10-03 National Semiconductor Corporation Dual-sided semiconductor device with a resistive element that requires little silicon surface area
JP2004533347A (ja) * 2001-06-13 2004-11-04 フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング 結晶外面に対する結晶面の方位を決定する装置及び方法、及び切断機にて単結晶を切断する装置及び方法
KR20030030620A (ko) * 2001-10-12 2003-04-18 주식회사 실트론 게터링 수단을 가진 단결정 실리콘 웨이퍼 및 그제조방법
US6677235B1 (en) 2001-12-03 2004-01-13 National Semiconductor Corporation Silicon die with metal feed through structure
US6746956B1 (en) 2001-12-03 2004-06-08 National Semiconductor Corporation Hermetic seal for silicon die with metal feed through structure
US7109571B1 (en) 2001-12-03 2006-09-19 National Semiconductor Corporation Method of forming a hermetic seal for silicon die with metal feed through structure
US7005388B1 (en) 2003-12-04 2006-02-28 National Semiconductor Corporation Method of forming through-the-wafer metal interconnect structures
JP2010098307A (ja) * 2008-10-15 2010-04-30 Siltronic Ag 半導体材料の複合ロッドを複数のウェハに同時に切断する方法

Also Published As

Publication number Publication date
JPH07118473B2 (ja) 1995-12-18

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees