JPS6419581A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS6419581A JPS6419581A JP17665087A JP17665087A JPS6419581A JP S6419581 A JPS6419581 A JP S6419581A JP 17665087 A JP17665087 A JP 17665087A JP 17665087 A JP17665087 A JP 17665087A JP S6419581 A JPS6419581 A JP S6419581A
- Authority
- JP
- Japan
- Prior art keywords
- write
- address
- dec
- read
- port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Static Random-Access Memory (AREA)
- Memory System (AREA)
- Dram (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17665087A JPS6419581A (en) | 1987-07-14 | 1987-07-14 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17665087A JPS6419581A (en) | 1987-07-14 | 1987-07-14 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6419581A true JPS6419581A (en) | 1989-01-23 |
Family
ID=16017290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17665087A Pending JPS6419581A (en) | 1987-07-14 | 1987-07-14 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6419581A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03108186A (ja) * | 1989-09-21 | 1991-05-08 | Shogo Matsui | 動的ダイナミックramリフレッシュ方法及び装置 |
JPH03219493A (ja) * | 1989-11-21 | 1991-09-26 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JPH0485789A (ja) * | 1990-07-27 | 1992-03-18 | Nec Corp | メモリ装置 |
EP0646927A1 (en) * | 1993-10-05 | 1995-04-05 | Advanced Micro Devices, Inc. | Plural port memory system |
KR100304742B1 (ko) * | 1997-03-19 | 2001-09-24 | 니시무로 타이죠 | 동기식랜덤액세스메모리 |
KR100837272B1 (ko) * | 2006-08-22 | 2008-06-11 | 삼성전자주식회사 | 플래시 메모리 장치의 블록 상태 저장 장치 |
JP2009238367A (ja) * | 2002-09-12 | 2009-10-15 | Panasonic Corp | メモリ装置 |
JP2013157051A (ja) * | 2012-01-30 | 2013-08-15 | Renesas Electronics Corp | 半導体装置 |
-
1987
- 1987-07-14 JP JP17665087A patent/JPS6419581A/ja active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03108186A (ja) * | 1989-09-21 | 1991-05-08 | Shogo Matsui | 動的ダイナミックramリフレッシュ方法及び装置 |
JPH03219493A (ja) * | 1989-11-21 | 1991-09-26 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JPH0485789A (ja) * | 1990-07-27 | 1992-03-18 | Nec Corp | メモリ装置 |
EP0646927A1 (en) * | 1993-10-05 | 1995-04-05 | Advanced Micro Devices, Inc. | Plural port memory system |
KR100304742B1 (ko) * | 1997-03-19 | 2001-09-24 | 니시무로 타이죠 | 동기식랜덤액세스메모리 |
JP2009238367A (ja) * | 2002-09-12 | 2009-10-15 | Panasonic Corp | メモリ装置 |
KR100837272B1 (ko) * | 2006-08-22 | 2008-06-11 | 삼성전자주식회사 | 플래시 메모리 장치의 블록 상태 저장 장치 |
JP2013157051A (ja) * | 2012-01-30 | 2013-08-15 | Renesas Electronics Corp | 半導体装置 |
US9214222B2 (en) | 2012-01-30 | 2015-12-15 | Renesas Electronics Corporation | Semiconductor device having timing control for read-write memory access operations |
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