JPS6415932A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6415932A JPS6415932A JP17213187A JP17213187A JPS6415932A JP S6415932 A JPS6415932 A JP S6415932A JP 17213187 A JP17213187 A JP 17213187A JP 17213187 A JP17213187 A JP 17213187A JP S6415932 A JPS6415932 A JP S6415932A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- heat treatment
- photo
- alloy
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent after corrosion by applying heat treatment at a specific temperature or more as post treatment when aluminum or a metallic film containing aluminum is etched by using a chlorine group gas. CONSTITUTION:A PSG film 2 is grown onto an silicon semiconductor substrate 1, and an Al-Si (1%) alloy 3 is grown through a sputtering method. Afterwards, a phenol resin group positive type photo-resist is patterned. Reactive ion etching using [BCl3+Cl2] gas is conducted, employing a photo-resist-pattern 4 as a mask, and an Al-Si (1%) alloy 5 is acquired through patterning. Cl6 is absorbed mainly to the intermediate section and surface of the photo-resist at that time. An oven brought to an N2 atmosphere is used, and heat treatment for thirty min at 200 deg.C is applied, thus dispersing adsorbed Cl6. Cl8 gradually separates from the substrate. Approximately 200 deg.C is the most preferable for heat treatment, but 180 deg.C or more may be used.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17213187A JPS6415932A (en) | 1987-07-09 | 1987-07-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17213187A JPS6415932A (en) | 1987-07-09 | 1987-07-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415932A true JPS6415932A (en) | 1989-01-19 |
Family
ID=15936140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17213187A Pending JPS6415932A (en) | 1987-07-09 | 1987-07-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415932A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6100201A (en) * | 1997-03-05 | 2000-08-08 | Nec Corporation | Method of forming a semiconductor memory device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753939A (en) * | 1980-09-17 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Dry etching method for thin film |
JPS61147530A (en) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | Reactive ion etching method |
-
1987
- 1987-07-09 JP JP17213187A patent/JPS6415932A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753939A (en) * | 1980-09-17 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Dry etching method for thin film |
JPS61147530A (en) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | Reactive ion etching method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6100201A (en) * | 1997-03-05 | 2000-08-08 | Nec Corporation | Method of forming a semiconductor memory device |
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