JPS6415932A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6415932A
JPS6415932A JP17213187A JP17213187A JPS6415932A JP S6415932 A JPS6415932 A JP S6415932A JP 17213187 A JP17213187 A JP 17213187A JP 17213187 A JP17213187 A JP 17213187A JP S6415932 A JPS6415932 A JP S6415932A
Authority
JP
Japan
Prior art keywords
resist
heat treatment
photo
alloy
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17213187A
Other languages
Japanese (ja)
Inventor
Seiji Sagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17213187A priority Critical patent/JPS6415932A/en
Publication of JPS6415932A publication Critical patent/JPS6415932A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent after corrosion by applying heat treatment at a specific temperature or more as post treatment when aluminum or a metallic film containing aluminum is etched by using a chlorine group gas. CONSTITUTION:A PSG film 2 is grown onto an silicon semiconductor substrate 1, and an Al-Si (1%) alloy 3 is grown through a sputtering method. Afterwards, a phenol resin group positive type photo-resist is patterned. Reactive ion etching using [BCl3+Cl2] gas is conducted, employing a photo-resist-pattern 4 as a mask, and an Al-Si (1%) alloy 5 is acquired through patterning. Cl6 is absorbed mainly to the intermediate section and surface of the photo-resist at that time. An oven brought to an N2 atmosphere is used, and heat treatment for thirty min at 200 deg.C is applied, thus dispersing adsorbed Cl6. Cl8 gradually separates from the substrate. Approximately 200 deg.C is the most preferable for heat treatment, but 180 deg.C or more may be used.
JP17213187A 1987-07-09 1987-07-09 Manufacture of semiconductor device Pending JPS6415932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17213187A JPS6415932A (en) 1987-07-09 1987-07-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17213187A JPS6415932A (en) 1987-07-09 1987-07-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6415932A true JPS6415932A (en) 1989-01-19

Family

ID=15936140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17213187A Pending JPS6415932A (en) 1987-07-09 1987-07-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6415932A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100201A (en) * 1997-03-05 2000-08-08 Nec Corporation Method of forming a semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753939A (en) * 1980-09-17 1982-03-31 Matsushita Electric Ind Co Ltd Dry etching method for thin film
JPS61147530A (en) * 1984-12-21 1986-07-05 Toshiba Corp Reactive ion etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753939A (en) * 1980-09-17 1982-03-31 Matsushita Electric Ind Co Ltd Dry etching method for thin film
JPS61147530A (en) * 1984-12-21 1986-07-05 Toshiba Corp Reactive ion etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100201A (en) * 1997-03-05 2000-08-08 Nec Corporation Method of forming a semiconductor memory device

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