JPS6414791A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6414791A
JPS6414791A JP62168663A JP16866387A JPS6414791A JP S6414791 A JPS6414791 A JP S6414791A JP 62168663 A JP62168663 A JP 62168663A JP 16866387 A JP16866387 A JP 16866387A JP S6414791 A JPS6414791 A JP S6414791A
Authority
JP
Japan
Prior art keywords
circuits
plural
peripheral circuits
reference potential
voltage generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62168663A
Other languages
Japanese (ja)
Inventor
Kazuhisa Miyamoto
Shuichi Miyaoka
Kayoko Kono
Masanori Odaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62168663A priority Critical patent/JPS6414791A/en
Publication of JPS6414791A publication Critical patent/JPS6414791A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To stabilize the operation of a bipolar CMOS type RAM by arranging plural fixed voltage generating circuit adjacently to each other correspondingly to plural peripheral circuits requiring reference potential. CONSTITUTION:Plural fixed voltage generating circuits VG1, VG2 are adjacently arranged correspondingly to plural peripheral circuits respectively requiring the common reference potential and arranged distributedly around a memory array M-ARY. Thereby, respective fixed voltage generating circuits VG1, VG2 can form the reference potential showing level variation similar to that of power supply voltage to be supplied to the corresponding peripheral circuits. Consequently, the current values of fixed current source circuits included in respective peripheral circuits can be stabilized and the operation of the bipolar CMOS type RAM can be stabilized.
JP62168663A 1987-07-08 1987-07-08 Semiconductor storage device Pending JPS6414791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62168663A JPS6414791A (en) 1987-07-08 1987-07-08 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62168663A JPS6414791A (en) 1987-07-08 1987-07-08 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6414791A true JPS6414791A (en) 1989-01-18

Family

ID=15872193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62168663A Pending JPS6414791A (en) 1987-07-08 1987-07-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6414791A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452320B1 (en) * 2002-06-08 2004-10-12 삼성전자주식회사 semiconductor memory device having array voltage control circuit comprised of a plurality of feed back loops
JP2006264953A (en) * 2005-03-25 2006-10-05 Taiyo Seiki Kogyo Kk Cargo handling hook

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452320B1 (en) * 2002-06-08 2004-10-12 삼성전자주식회사 semiconductor memory device having array voltage control circuit comprised of a plurality of feed back loops
JP2006264953A (en) * 2005-03-25 2006-10-05 Taiyo Seiki Kogyo Kk Cargo handling hook

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