JPS6412114B2 - - Google Patents
Info
- Publication number
- JPS6412114B2 JPS6412114B2 JP14812682A JP14812682A JPS6412114B2 JP S6412114 B2 JPS6412114 B2 JP S6412114B2 JP 14812682 A JP14812682 A JP 14812682A JP 14812682 A JP14812682 A JP 14812682A JP S6412114 B2 JPS6412114 B2 JP S6412114B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- laser
- refractive index
- vertical oscillation
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 25
- 238000009826 distribution Methods 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 5
- 125000005842 heteroatom Chemical group 0.000 claims description 5
- 230000010363 phase shift Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000009751 slip forming Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 36
- 239000012071 phase Substances 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- -1 zinc chalcogenide Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14812682A JPS5936988A (ja) | 1982-08-26 | 1982-08-26 | 垂直発振型半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14812682A JPS5936988A (ja) | 1982-08-26 | 1982-08-26 | 垂直発振型半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5936988A JPS5936988A (ja) | 1984-02-29 |
| JPS6412114B2 true JPS6412114B2 (de) | 1989-02-28 |
Family
ID=15445836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14812682A Granted JPS5936988A (ja) | 1982-08-26 | 1982-08-26 | 垂直発振型半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5936988A (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6032381A (ja) * | 1983-08-01 | 1985-02-19 | Matsushita Electric Ind Co Ltd | 面発光半導体レ−ザ装置 |
| JPH0750807B2 (ja) * | 1984-03-28 | 1995-05-31 | 東北大学長 | 接合型半導体発光素子 |
| JPH0719005B2 (ja) * | 1984-07-11 | 1995-03-06 | 株式会社日立製作所 | 光双安定素子 |
| US4756606A (en) * | 1986-06-05 | 1988-07-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Apparatus comprising a monolithic nonlinear Fabry-Perot etalon, and method for producing same |
| JPS63318195A (ja) * | 1987-06-19 | 1988-12-27 | Agency Of Ind Science & Technol | 横方向埋め込み型面発光レ−ザ |
| JP2528886B2 (ja) * | 1987-07-16 | 1996-08-28 | 富士通株式会社 | 半導体発光装置 |
| EP0397691B1 (de) * | 1988-01-06 | 2000-02-09 | Telstra Corporation Limited | Strominjektionslaser |
| DE3808875A1 (de) * | 1988-03-17 | 1989-09-28 | Standard Elektrik Lorenz Ag | Halbleiteranordnung zur erzeugung einer periodischen brechungsindexverteilung und/oder periodischen verstaerkungsverteilung |
| JP2704227B2 (ja) * | 1988-05-27 | 1998-01-26 | 日本電信電話株式会社 | 半導体レーザー装置 |
| JP2845456B2 (ja) * | 1988-08-31 | 1999-01-13 | 富士通株式会社 | 半導体面発光装置と光処理方法 |
| JP2658291B2 (ja) * | 1988-11-04 | 1997-09-30 | 日本電気株式会社 | 発光素子 |
| US4999842A (en) * | 1989-03-01 | 1991-03-12 | At&T Bell Laboratories | Quantum well vertical cavity laser |
| JPH03190181A (ja) * | 1989-12-19 | 1991-08-20 | Nec Corp | 面発光レーザとその製造方法 |
| JPH0423380A (ja) * | 1990-05-14 | 1992-01-27 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザ |
| JP2689694B2 (ja) * | 1990-06-22 | 1997-12-10 | 日本電気株式会社 | 面発光半導体レーザの製造方法 |
| US5136603A (en) * | 1991-04-29 | 1992-08-04 | At&T Bell Laboratories | Self-monitoring semiconductor laser device |
| JP3726398B2 (ja) * | 1997-02-14 | 2005-12-14 | 富士ゼロックス株式会社 | 半導体装置 |
| JP5932254B2 (ja) * | 2011-07-13 | 2016-06-08 | キヤノン株式会社 | 垂直共振器型面発光レーザ |
| JP6354468B2 (ja) * | 2014-09-02 | 2018-07-11 | 富士ゼロックス株式会社 | 乾燥装置、及び画像形成装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5367391A (en) * | 1976-11-29 | 1978-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| DE2926803A1 (de) * | 1979-07-03 | 1981-02-12 | Licentia Gmbh | Elektrolumineszenz-anordnung |
| US4309670A (en) * | 1979-09-13 | 1982-01-05 | Xerox Corporation | Transverse light emitting electroluminescent devices |
-
1982
- 1982-08-26 JP JP14812682A patent/JPS5936988A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5936988A (ja) | 1984-02-29 |
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