JPS6410103B2 - - Google Patents
Info
- Publication number
- JPS6410103B2 JPS6410103B2 JP57048673A JP4867382A JPS6410103B2 JP S6410103 B2 JPS6410103 B2 JP S6410103B2 JP 57048673 A JP57048673 A JP 57048673A JP 4867382 A JP4867382 A JP 4867382A JP S6410103 B2 JPS6410103 B2 JP S6410103B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- region
- conductivity type
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 20
- -1 boron ions Chemical class 0.000 description 13
- 229910052796 boron Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000000295 complement effect Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57048673A JPS58165370A (ja) | 1982-03-26 | 1982-03-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57048673A JPS58165370A (ja) | 1982-03-26 | 1982-03-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58165370A JPS58165370A (ja) | 1983-09-30 |
| JPS6410103B2 true JPS6410103B2 (US06818201-20041116-C00086.png) | 1989-02-21 |
Family
ID=12809836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57048673A Granted JPS58165370A (ja) | 1982-03-26 | 1982-03-26 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58165370A (US06818201-20041116-C00086.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3340560A1 (de) * | 1983-11-09 | 1985-05-15 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen |
| JPS6144456A (ja) * | 1984-08-09 | 1986-03-04 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1982
- 1982-03-26 JP JP57048673A patent/JPS58165370A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58165370A (ja) | 1983-09-30 |
