JPS6410062B2 - - Google Patents
Info
- Publication number
- JPS6410062B2 JPS6410062B2 JP18790880A JP18790880A JPS6410062B2 JP S6410062 B2 JPS6410062 B2 JP S6410062B2 JP 18790880 A JP18790880 A JP 18790880A JP 18790880 A JP18790880 A JP 18790880A JP S6410062 B2 JPS6410062 B2 JP S6410062B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- mask
- resist
- indium oxide
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18790880A JPS57112025A (en) | 1980-12-29 | 1980-12-29 | Formation of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18790880A JPS57112025A (en) | 1980-12-29 | 1980-12-29 | Formation of pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57112025A JPS57112025A (en) | 1982-07-12 |
| JPS6410062B2 true JPS6410062B2 (OSRAM) | 1989-02-21 |
Family
ID=16214303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18790880A Granted JPS57112025A (en) | 1980-12-29 | 1980-12-29 | Formation of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57112025A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2189903A (en) * | 1986-04-01 | 1987-11-04 | Plessey Co Plc | An etch technique for metal mask definition |
| JPS63166231A (ja) * | 1986-12-27 | 1988-07-09 | Hoya Corp | フオトマスクの製造方法 |
-
1980
- 1980-12-29 JP JP18790880A patent/JPS57112025A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57112025A (en) | 1982-07-12 |
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