JPS639584B2 - - Google Patents

Info

Publication number
JPS639584B2
JPS639584B2 JP15509783A JP15509783A JPS639584B2 JP S639584 B2 JPS639584 B2 JP S639584B2 JP 15509783 A JP15509783 A JP 15509783A JP 15509783 A JP15509783 A JP 15509783A JP S639584 B2 JPS639584 B2 JP S639584B2
Authority
JP
Japan
Prior art keywords
plasma
target
deposition apparatus
plasma deposition
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15509783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6050167A (ja
Inventor
Toshiro Ono
Seitaro Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15509783A priority Critical patent/JPS6050167A/ja
Priority to DE8383305201T priority patent/DE3378508D1/de
Priority to EP83305201A priority patent/EP0103461B1/en
Priority to US06/530,671 priority patent/US4492620A/en
Publication of JPS6050167A publication Critical patent/JPS6050167A/ja
Publication of JPS639584B2 publication Critical patent/JPS639584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP15509783A 1982-09-10 1983-08-26 プラズマ付着装置 Granted JPS6050167A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15509783A JPS6050167A (ja) 1983-08-26 1983-08-26 プラズマ付着装置
DE8383305201T DE3378508D1 (en) 1982-09-10 1983-09-07 Plasma deposition method and apparatus
EP83305201A EP0103461B1 (en) 1982-09-10 1983-09-07 Plasma deposition method and apparatus
US06/530,671 US4492620A (en) 1982-09-10 1983-09-09 Plasma deposition method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15509783A JPS6050167A (ja) 1983-08-26 1983-08-26 プラズマ付着装置

Publications (2)

Publication Number Publication Date
JPS6050167A JPS6050167A (ja) 1985-03-19
JPS639584B2 true JPS639584B2 (enExample) 1988-02-29

Family

ID=15598557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15509783A Granted JPS6050167A (ja) 1982-09-10 1983-08-26 プラズマ付着装置

Country Status (1)

Country Link
JP (1) JPS6050167A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0627324B2 (ja) * 1984-08-31 1994-04-13 株式会社日立製作所 プラズマ処理方法及びその装置
JPS61104074A (ja) * 1984-10-26 1986-05-22 Hitachi Ltd スパッタリング方法及びその装置
JPS61279674A (ja) * 1985-06-05 1986-12-10 Osaka Shinku Kiki Seisakusho:Kk スパツタ装置
JPS6295823A (ja) * 1985-10-22 1987-05-02 Sumitomo Electric Ind Ltd 半導体集積回路の製造方法
JPH0621352B2 (ja) * 1985-12-25 1994-03-23 株式会社日立製作所 スパツタリング装置
JPS6376867A (ja) * 1986-09-19 1988-04-07 Mitsubishi Kasei Corp 反応性スパツタリング装置
JPS63157863A (ja) * 1986-12-19 1988-06-30 Fujitsu Ltd Ｅｃｒスパツタリング法
JP2566137B2 (ja) * 1986-12-25 1996-12-25 ティーディーケイ株式会社 薄膜の製造方法
JP2602267B2 (ja) * 1988-02-08 1997-04-23 日本電信電話株式会社 プラズマ生成装置およびプラズマを利用した薄膜形成装置
KR920003789B1 (ko) * 1988-02-08 1992-05-14 니뽄 덴신 덴와 가부시끼가이샤 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온원
JP2595009B2 (ja) * 1988-02-08 1997-03-26 日本電信電話株式会社 プラズマ生成装置およびプラズマを利用した薄膜形成装置
US4911814A (en) * 1988-02-08 1990-03-27 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
JPH01246357A (ja) * 1988-03-28 1989-10-02 Mitsubishi Heavy Ind Ltd 立方晶窒化ホウ素膜の製造方法
JP2506961B2 (ja) * 1988-07-25 1996-06-12 松下電器産業株式会社 薄膜トランジスタの製造方法
JP2506978B2 (ja) * 1988-08-22 1996-06-12 松下電器産業株式会社 チタン酸鉛薄膜の製造方法
JPH02219225A (ja) * 1989-02-20 1990-08-31 Matsushita Electric Ind Co Ltd 膜堆積装置および膜堆積方法
JP3430036B2 (ja) * 1998-10-29 2003-07-28 松下電器産業株式会社 薄膜の形成方法及び半導体発光素子の製造方法
JP3957198B2 (ja) * 2003-03-07 2007-08-15 日本電信電話株式会社 薄膜形成方法
JP4493999B2 (ja) * 2003-12-11 2010-06-30 エム・イー・エス・アフティ株式会社 プラズマ成膜装置及び該装置を用いた膜形成方法
UA127223C2 (uk) * 2020-09-25 2023-06-14 Національний Науковий Центр "Харківський Фізико-Технічний Інститут" Спосіб створення вакуумно-дугової катодної плазми
JP7488166B2 (ja) * 2020-09-25 2024-05-21 Ｊｓｗアフティ株式会社 ターゲットおよび成膜装置

Also Published As

Publication number Publication date
JPS6050167A (ja) 1985-03-19

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