JPS63955B2 - - Google Patents
Info
- Publication number
- JPS63955B2 JPS63955B2 JP54157692A JP15769279A JPS63955B2 JP S63955 B2 JPS63955 B2 JP S63955B2 JP 54157692 A JP54157692 A JP 54157692A JP 15769279 A JP15769279 A JP 15769279A JP S63955 B2 JPS63955 B2 JP S63955B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- semiconductor
- type
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15769279A JPS5680179A (en) | 1979-12-05 | 1979-12-05 | Planar type hetero-junction light detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15769279A JPS5680179A (en) | 1979-12-05 | 1979-12-05 | Planar type hetero-junction light detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5680179A JPS5680179A (en) | 1981-07-01 |
| JPS63955B2 true JPS63955B2 (OSRAM) | 1988-01-09 |
Family
ID=15655289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15769279A Granted JPS5680179A (en) | 1979-12-05 | 1979-12-05 | Planar type hetero-junction light detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5680179A (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011109146A (ja) * | 2011-03-01 | 2011-06-02 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ族化合物半導体受光素子 |
| US8866199B2 (en) | 2009-09-07 | 2014-10-21 | Sumitomo Electric Industries, Ltd. | Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer |
| JP2015043466A (ja) * | 2014-12-01 | 2015-03-05 | 住友電気工業株式会社 | Ｉｉｉ−ｖ族化合物半導体受光素子 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56167373A (en) * | 1980-05-27 | 1981-12-23 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light sensor |
| JPS5723490A (en) * | 1980-07-15 | 1982-02-06 | Matsushita Electric Works Ltd | Electric equipment with heater |
| JPS6285832A (ja) * | 1985-10-11 | 1987-04-20 | Mitsubishi Cable Ind Ltd | 光学式温度計 |
| US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
| US5148251A (en) * | 1991-11-25 | 1992-09-15 | The United States Of America As Represented By The Secretary Of The Army | Photoconductive avalanche GaAs switch |
| US5343054A (en) * | 1992-09-14 | 1994-08-30 | Kabushiki Kaisha Toshiba | Semiconductor light-detection device with recombination rates |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5441091A (en) * | 1977-09-08 | 1979-03-31 | Matsushita Electronics Corp | Semiconductor photoelectric transducer |
-
1979
- 1979-12-05 JP JP15769279A patent/JPS5680179A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8866199B2 (en) | 2009-09-07 | 2014-10-21 | Sumitomo Electric Industries, Ltd. | Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer |
| US9159853B2 (en) | 2009-09-07 | 2015-10-13 | Sumitomo Electric Industries, Ltd. | Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer |
| JP2011109146A (ja) * | 2011-03-01 | 2011-06-02 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ族化合物半導体受光素子 |
| JP2015043466A (ja) * | 2014-12-01 | 2015-03-05 | 住友電気工業株式会社 | Ｉｉｉ−ｖ族化合物半導体受光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5680179A (en) | 1981-07-01 |
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