JPS6244709B2 - - Google Patents

Info

Publication number
JPS6244709B2
JPS6244709B2 JP54116895A JP11689579A JPS6244709B2 JP S6244709 B2 JPS6244709 B2 JP S6244709B2 JP 54116895 A JP54116895 A JP 54116895A JP 11689579 A JP11689579 A JP 11689579A JP S6244709 B2 JPS6244709 B2 JP S6244709B2
Authority
JP
Japan
Prior art keywords
layer
junction
semiconductor
semiconductor layer
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54116895A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5642385A (en
Inventor
Yoshinari Matsumoto
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11689579A priority Critical patent/JPS5642385A/ja
Publication of JPS5642385A publication Critical patent/JPS5642385A/ja
Publication of JPS6244709B2 publication Critical patent/JPS6244709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP11689579A 1979-09-12 1979-09-12 Hetero-structure semiconductor device Granted JPS5642385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11689579A JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11689579A JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642385A JPS5642385A (en) 1981-04-20
JPS6244709B2 true JPS6244709B2 (OSRAM) 1987-09-22

Family

ID=14698287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11689579A Granted JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642385A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01150107U (OSRAM) * 1988-04-04 1989-10-17

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198667A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPS5830164A (ja) * 1981-08-17 1983-02-22 Nippon Telegr & Teleph Corp <Ntt> アバランシフオトダイオ−ド及びその製法
DE3135469C1 (de) * 1981-09-08 1983-04-21 Peter 6272 Niedernhausen Bayer Verfahren zur Anfertigung von Zahnersatz,Zahnersatzteilen oder verlorenen Giessmodellen hierfuer und Formen zur Durchfuehrung dieses Verfahrens
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法
JPS5892283A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 半導体受光素子の製造方法
JPH06101578B2 (ja) * 1984-03-22 1994-12-12 日本電気株式会社 プレーナ型ヘテロ接合アバランシェフォトダイオード
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
JPH06281783A (ja) * 1993-06-29 1994-10-07 Babcock Hitachi Kk 沸騰水形原子炉圧力容器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01150107U (OSRAM) * 1988-04-04 1989-10-17

Also Published As

Publication number Publication date
JPS5642385A (en) 1981-04-20

Similar Documents

Publication Publication Date Title
JP4220688B2 (ja) アバランシェホトダイオード
EP0043734B1 (en) Avalanche photodiodes
EP0156156A1 (en) Avalanche photodiodes
US4656494A (en) Avalanche multiplication photodiode having a buried structure
CN101312221B (zh) 半导体受光元件及其制造方法
US4840916A (en) Process for fabricating an avalanche photodiode
US5132747A (en) Avalanche photo diode
JPH051628B2 (OSRAM)
US4390889A (en) Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
JPS6244709B2 (OSRAM)
JP3675223B2 (ja) アバランシェフォトダイオードとその製造方法
JP4861388B2 (ja) アバランシェホトダイオード
US4935795A (en) Avalanche photodiode with uniform avalanche multiplication
CA2050363A1 (en) Photo-sensing device
JPH038117B2 (OSRAM)
KR20000024447A (ko) 애벌란치형 광검출기 및 제작 방법
JPS63955B2 (OSRAM)
JP2793238B2 (ja) 半導体受光装置及びその製造方法
JPH05291605A (ja) 半導体受光素子
JP2633234B2 (ja) 光半導体素子
JPS61289678A (ja) アバランシユ・ホトダイオ−ド
JPS6138872B2 (OSRAM)
JPH041740Y2 (OSRAM)
JP2995751B2 (ja) 半導体受光素子
JPS6244710B2 (OSRAM)