JPS63940B2 - - Google Patents

Info

Publication number
JPS63940B2
JPS63940B2 JP54149727A JP14972779A JPS63940B2 JP S63940 B2 JPS63940 B2 JP S63940B2 JP 54149727 A JP54149727 A JP 54149727A JP 14972779 A JP14972779 A JP 14972779A JP S63940 B2 JPS63940 B2 JP S63940B2
Authority
JP
Japan
Prior art keywords
film
gas
film forming
support
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54149727A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5671931A (en
Inventor
Nobuo Kitajima
Kyosuke Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14972779A priority Critical patent/JPS5671931A/ja
Publication of JPS5671931A publication Critical patent/JPS5671931A/ja
Publication of JPS63940B2 publication Critical patent/JPS63940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)
JP14972779A 1979-11-19 1979-11-19 Film formation Granted JPS5671931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14972779A JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14972779A JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Publications (2)

Publication Number Publication Date
JPS5671931A JPS5671931A (en) 1981-06-15
JPS63940B2 true JPS63940B2 (en:Method) 1988-01-09

Family

ID=15481483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14972779A Granted JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Country Status (1)

Country Link
JP (1) JPS5671931A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10683335B2 (en) 2011-06-07 2020-06-16 Asahi Kasei Pharma Corporation Freeze-dried preparation containing high-purity PTH and method for producing same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6720576B1 (en) 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10683335B2 (en) 2011-06-07 2020-06-16 Asahi Kasei Pharma Corporation Freeze-dried preparation containing high-purity PTH and method for producing same

Also Published As

Publication number Publication date
JPS5671931A (en) 1981-06-15

Similar Documents

Publication Publication Date Title
US5187115A (en) Method of forming semiconducting materials and barriers using a dual enclosure apparatus
US4226897A (en) Method of forming semiconducting materials and barriers
US4328258A (en) Method of forming semiconducting materials and barriers
US6495392B2 (en) Process for producing a semiconductor device
JP3960792B2 (ja) プラズマｃｖｄ装置、非晶質シリコン系薄膜の製造方法
US6470823B2 (en) Apparatus and method for forming a deposited film by a means of plasma CVD
JPH08298333A (ja) 半導体被膜作製装置および薄膜太陽電池および薄膜太陽電池の作製方法
JPS62151573A (ja) 堆積膜形成法
JPS63940B2 (en:Method)
US5049523A (en) Method of forming semiconducting materials and barriers
JPS6239532B2 (en:Method)
US5543634A (en) Method of forming semiconductor materials and barriers
EP1055747B1 (en) Apparatus and method for forming a film on a substrate
JP2001152347A (ja) プラズマｃｖｄ装置およびシリコン系薄膜光電変換装置の製造方法
US5073804A (en) Method of forming semiconductor materials and barriers
JP3673593B2 (ja) 非単結晶半導体薄膜の形成装置および方法
JPS6191010A (ja) 堆積膜形成法
Takagi et al. Large area multi-zone type VHF-PCVD system for a-Si and/spl mu/c-Si deposition
JP3683999B2 (ja) 非単結晶半導体薄膜の形成方法および形成装置
JP3478745B2 (ja) 堆積膜形成方法および堆積膜形成装置
JP3069714B2 (ja) 水素化非晶質シリコン成膜装置
JPS60111414A (ja) プラズマ気相反応方法およびその製造装置
JPS62262419A (ja) プラズマｃｖｄ装置
JP2575397B2 (ja) 光電変換素子の製造方法
JPH05247655A (ja) 堆積膜形成装置