JPS5671931A - Film formation - Google Patents

Film formation

Info

Publication number
JPS5671931A
JPS5671931A JP14972779A JP14972779A JPS5671931A JP S5671931 A JPS5671931 A JP S5671931A JP 14972779 A JP14972779 A JP 14972779A JP 14972779 A JP14972779 A JP 14972779A JP S5671931 A JPS5671931 A JP S5671931A
Authority
JP
Japan
Prior art keywords
electrodes
reaction chamber
support substances
films
decompression
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14972779A
Other languages
Japanese (ja)
Other versions
JPS63940B2 (en
Inventor
Nobuo Kitajima
Kyosuke Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14972779A priority Critical patent/JPS5671931A/en
Publication of JPS5671931A publication Critical patent/JPS5671931A/en
Publication of JPS63940B2 publication Critical patent/JPS63940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain high-quality amorphous Si films with uniform film thickness by horizontally arranging two plated electrodes at predetermined intervals in a decompression and reaction chamber wherein support substances for film formation are passed in a zigzag direction between the electrodes to make perpendicular to the electrodes. CONSTITUTION:Two plated electrodes 102-1 and 102-2 are horizontally arranged in parallel at predetermined intervals in a decompression and reaction chamber 101 and the electrodes 102-1 and 102-2 are connected to a power source 105 through insulating terminals 104-1 and 104-2 penetrating through the wall of the chamber respectively. Next, filmy support substances 103 forming films are moved by passing between the electrodes 102-1 and 102-2. In this case, support substances 103 having fixed length are passed in a zigzag direction by using a supply roll and a take-up roll provided in the reaction chamber 101 and the surfaces of the support substances are given perpendicular to the electrodes. The reaction chamber is composed of the above method and SiH4, H2, PH3 or B2H6 from bombs 106-1-106-3 is flowed in the reaction chamber and Si films are produced with high formation speed by glow discharge.
JP14972779A 1979-11-19 1979-11-19 Film formation Granted JPS5671931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14972779A JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14972779A JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Publications (2)

Publication Number Publication Date
JPS5671931A true JPS5671931A (en) 1981-06-15
JPS63940B2 JPS63940B2 (en) 1988-01-09

Family

ID=15481483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14972779A Granted JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Country Status (1)

Country Link
JP (1) JPS5671931A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6720576B1 (en) 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140088014A1 (en) 2011-06-07 2014-03-27 Asahi Kasei Pharma Corporation Freeze-dried preparation containing high-purity pth and method for producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6720576B1 (en) 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device
US7095090B2 (en) 1992-09-11 2006-08-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
JPS63940B2 (en) 1988-01-09

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