JPS6386432A - 電子ビ−ム描画方法 - Google Patents
電子ビ−ム描画方法Info
- Publication number
- JPS6386432A JPS6386432A JP22985886A JP22985886A JPS6386432A JP S6386432 A JPS6386432 A JP S6386432A JP 22985886 A JP22985886 A JP 22985886A JP 22985886 A JP22985886 A JP 22985886A JP S6386432 A JPS6386432 A JP S6386432A
- Authority
- JP
- Japan
- Prior art keywords
- size
- measured
- current
- beam size
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000000609 electron-beam lithography Methods 0.000 title claims description 12
- 238000007493 shaping process Methods 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract 2
- 238000000465 moulding Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22985886A JPS6386432A (ja) | 1986-09-30 | 1986-09-30 | 電子ビ−ム描画方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22985886A JPS6386432A (ja) | 1986-09-30 | 1986-09-30 | 電子ビ−ム描画方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6386432A true JPS6386432A (ja) | 1988-04-16 |
JPH048938B2 JPH048938B2 (enrdf_load_stackoverflow) | 1992-02-18 |
Family
ID=16898794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22985886A Granted JPS6386432A (ja) | 1986-09-30 | 1986-09-30 | 電子ビ−ム描画方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6386432A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6544698B1 (en) | 2001-06-27 | 2003-04-08 | University Of South Florida | Maskless 2-D and 3-D pattern generation photolithography |
US6764796B2 (en) | 2001-06-27 | 2004-07-20 | University Of South Florida | Maskless photolithography using plasma displays |
US6998219B2 (en) | 2001-06-27 | 2006-02-14 | University Of South Florida | Maskless photolithography for etching and deposition |
US7271877B2 (en) | 2001-06-27 | 2007-09-18 | University Of South Florida | Method and apparatus for maskless photolithography |
-
1986
- 1986-09-30 JP JP22985886A patent/JPS6386432A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6544698B1 (en) | 2001-06-27 | 2003-04-08 | University Of South Florida | Maskless 2-D and 3-D pattern generation photolithography |
US6764796B2 (en) | 2001-06-27 | 2004-07-20 | University Of South Florida | Maskless photolithography using plasma displays |
US6998219B2 (en) | 2001-06-27 | 2006-02-14 | University Of South Florida | Maskless photolithography for etching and deposition |
US7271877B2 (en) | 2001-06-27 | 2007-09-18 | University Of South Florida | Method and apparatus for maskless photolithography |
US7573561B2 (en) | 2001-06-27 | 2009-08-11 | University Of South Florida | Method and apparatus for maskless photolithography |
US7572573B2 (en) | 2001-06-27 | 2009-08-11 | University Of South Florida | Maskless photolithography for etching and deposition |
Also Published As
Publication number | Publication date |
---|---|
JPH048938B2 (enrdf_load_stackoverflow) | 1992-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8188443B2 (en) | Focusing method of charged particle beam and astigmatism adjusting method of charged particle | |
JP2835097B2 (ja) | 荷電ビームの非点収差補正方法 | |
JPH0336299B2 (enrdf_load_stackoverflow) | ||
JPH06124883A (ja) | 荷電ビーム補正方法及びマーク検出方法 | |
US5404018A (en) | Method of and an apparatus for charged particle beam exposure | |
EP0367126A2 (en) | Charged particle beam exposure method using a mask | |
US4763004A (en) | Calibration method for electron beam exposer | |
JPS6386432A (ja) | 電子ビ−ム描画方法 | |
JPH04269613A (ja) | 荷電ビームの焦点合わせ方法 | |
JP3282324B2 (ja) | 荷電粒子ビーム露光方法 | |
JPH03173119A (ja) | 電子線描画装置 | |
JP2006294962A (ja) | 電子ビーム描画装置および描画方法 | |
JPH0414490B2 (enrdf_load_stackoverflow) | ||
JP3315882B2 (ja) | 電子線描画装置 | |
JPH04116915A (ja) | 描画ビーム径調整方法 | |
JP2000182937A (ja) | 荷電粒子ビーム描画装置 | |
JPS6312146A (ja) | パタ−ン寸法計測方法 | |
JP2002246303A (ja) | 焦点調整方法及び電子線描画装置 | |
JP3157968B2 (ja) | 荷電粒子ビーム露光方法 | |
JPH05299328A (ja) | 荷電粒子ビーム露光方法及び装置 | |
JP3450437B2 (ja) | 電子ビーム露光方法、現像方法及び装置 | |
JP3313606B2 (ja) | 電子線露光装置及び露光方法 | |
JPH10312954A (ja) | 電子ビーム露光装置 | |
JPH07107893B2 (ja) | 荷電ビ−ム描画方法 | |
JPH0423315A (ja) | 電子ビーム描画装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
EXPY | Cancellation because of completion of term |