JPS638611B2 - - Google Patents

Info

Publication number
JPS638611B2
JPS638611B2 JP54138923A JP13892379A JPS638611B2 JP S638611 B2 JPS638611 B2 JP S638611B2 JP 54138923 A JP54138923 A JP 54138923A JP 13892379 A JP13892379 A JP 13892379A JP S638611 B2 JPS638611 B2 JP S638611B2
Authority
JP
Japan
Prior art keywords
sio
insulating film
gas
film
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54138923A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5662328A (en
Inventor
Yutaka Hayashi
Iwao Hamaguchi
Kyohiko Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP13892379A priority Critical patent/JPS5662328A/ja
Publication of JPS5662328A publication Critical patent/JPS5662328A/ja
Priority to US06/635,477 priority patent/US4567061A/en
Publication of JPS638611B2 publication Critical patent/JPS638611B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Formation Of Insulating Films (AREA)
JP13892379A 1979-10-26 1979-10-26 Manufacturing of insulation membrane and insulation membrane-semiconductor interface Granted JPS5662328A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP13892379A JPS5662328A (en) 1979-10-26 1979-10-26 Manufacturing of insulation membrane and insulation membrane-semiconductor interface
US06/635,477 US4567061A (en) 1979-10-26 1984-07-30 Method for manufacture of insulating film and interface between insulation film and semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13892379A JPS5662328A (en) 1979-10-26 1979-10-26 Manufacturing of insulation membrane and insulation membrane-semiconductor interface

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58163048A Division JPS59218735A (ja) 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法

Publications (2)

Publication Number Publication Date
JPS5662328A JPS5662328A (en) 1981-05-28
JPS638611B2 true JPS638611B2 (ref) 1988-02-23

Family

ID=15233285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13892379A Granted JPS5662328A (en) 1979-10-26 1979-10-26 Manufacturing of insulation membrane and insulation membrane-semiconductor interface

Country Status (2)

Country Link
US (1) US4567061A (ref)
JP (1) JPS5662328A (ref)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753542A (en) 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
DE3689735T2 (de) * 1985-08-02 1994-06-30 Semiconductor Energy Lab Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
US5296405A (en) * 1985-08-02 1994-03-22 Semiconductor Energy Laboratory Co.., Ltd. Method for photo annealing non-single crystalline semiconductor films
US4916116A (en) * 1987-05-06 1990-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of adding a halogen element into oxide superconducting materials by ion injection
US4894353A (en) * 1988-04-29 1990-01-16 Advanced Micro Devices, Inc. Method of fabricating passivated tunnel oxide
US5043224A (en) * 1988-05-12 1991-08-27 Lehigh University Chemically enhanced thermal oxidation and nitridation of silicon and products thereof
DE69107101T2 (de) * 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
CN100367461C (zh) 1993-11-05 2008-02-06 株式会社半导体能源研究所 一种制造薄膜晶体管和电子器件的方法
US5591681A (en) * 1994-06-03 1997-01-07 Advanced Micro Devices, Inc. Method for achieving a highly reliable oxide film
US5702976A (en) 1995-10-24 1997-12-30 Micron Technology, Inc. Shallow trench isolation using low dielectric constant insulator
US5902128A (en) * 1996-10-17 1999-05-11 Micron Technology, Inc. Process to improve the flow of oxide during field oxidation by fluorine doping
JP4622318B2 (ja) * 2004-06-04 2011-02-02 セイコーエプソン株式会社 半導体装置の製造方法
JP4985855B2 (ja) * 2011-01-13 2012-07-25 セイコーエプソン株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3698948A (en) * 1968-07-26 1972-10-17 Motorola Inc Fabrication of a silicon-silicon dioxide interface of predetermined space charge polarity
US3692571A (en) * 1970-11-12 1972-09-19 Northern Electric Co Method of reducing the mobile ion contamination in thermally grown silicon dioxide
US4007294A (en) * 1974-06-06 1977-02-08 Rca Corporation Method of treating a layer of silicon dioxide
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
JPS5522862A (en) * 1978-08-07 1980-02-18 Nec Corp Manufacturing method for silicon oxidized film
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
US4232057A (en) * 1979-03-01 1980-11-04 International Business Machines Corporation Semiconductor plasma oxidation

Also Published As

Publication number Publication date
JPS5662328A (en) 1981-05-28
US4567061A (en) 1986-01-28

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