JPS6384014A - 半導体単結晶層の製造方法 - Google Patents

半導体単結晶層の製造方法

Info

Publication number
JPS6384014A
JPS6384014A JP61227187A JP22718786A JPS6384014A JP S6384014 A JPS6384014 A JP S6384014A JP 61227187 A JP61227187 A JP 61227187A JP 22718786 A JP22718786 A JP 22718786A JP S6384014 A JPS6384014 A JP S6384014A
Authority
JP
Japan
Prior art keywords
film
single crystal
crystal layer
silicon
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61227187A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0517693B2 (enExample
Inventor
Tomoyasu Inoue
井上　知泰
Toshihiko Hamazaki
浜崎　利彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61227187A priority Critical patent/JPS6384014A/ja
Publication of JPS6384014A publication Critical patent/JPS6384014A/ja
Publication of JPH0517693B2 publication Critical patent/JPH0517693B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials

Landscapes

  • Recrystallisation Techniques (AREA)
JP61227187A 1986-09-27 1986-09-27 半導体単結晶層の製造方法 Granted JPS6384014A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61227187A JPS6384014A (ja) 1986-09-27 1986-09-27 半導体単結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61227187A JPS6384014A (ja) 1986-09-27 1986-09-27 半導体単結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS6384014A true JPS6384014A (ja) 1988-04-14
JPH0517693B2 JPH0517693B2 (enExample) 1993-03-09

Family

ID=16856852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61227187A Granted JPS6384014A (ja) 1986-09-27 1986-09-27 半導体単結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS6384014A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6392012A (ja) * 1986-10-01 1988-04-22 コーニング　グラス　ワークス 積層物品およびその製造方法
US5123975A (en) * 1989-03-28 1992-06-23 Ricoh Company, Ltd. Single crystal silicon substrate
US5405802A (en) * 1992-01-31 1995-04-11 Canon Kabushiki Kaisha Process of fabricating a semiconductor substrate
AT513692A1 (de) * 2012-12-10 2014-06-15 Tgw Logistics Group Gmbh Sortieranlage und Verfahren zum Sortieren von Objekten in einer Förderanlage

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6392012A (ja) * 1986-10-01 1988-04-22 コーニング　グラス　ワークス 積層物品およびその製造方法
US5123975A (en) * 1989-03-28 1992-06-23 Ricoh Company, Ltd. Single crystal silicon substrate
US5405802A (en) * 1992-01-31 1995-04-11 Canon Kabushiki Kaisha Process of fabricating a semiconductor substrate
US5679475A (en) * 1992-01-31 1997-10-21 Canon Kabushiki Kaisha Semiconductor substrate and process for preparing the same
AT513692A1 (de) * 2012-12-10 2014-06-15 Tgw Logistics Group Gmbh Sortieranlage und Verfahren zum Sortieren von Objekten in einer Förderanlage

Also Published As

Publication number Publication date
JPH0517693B2 (enExample) 1993-03-09

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Legal Events

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EXPY Cancellation because of completion of term