JPS6382954U - - Google Patents
Info
- Publication number
- JPS6382954U JPS6382954U JP17674486U JP17674486U JPS6382954U JP S6382954 U JPS6382954 U JP S6382954U JP 17674486 U JP17674486 U JP 17674486U JP 17674486 U JP17674486 U JP 17674486U JP S6382954 U JPS6382954 U JP S6382954U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- lower individual
- image sensor
- individual electrode
- contact image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 2
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Description
第１図はこの考案の一実施例による密着型イメ
ージセンサの電極構造を示す平面図、第２図は第
１図の―線に沿う断面図、第３図は第１図の
下部個別電極の拡大平面図、第４図は第２図の下
部個別電極、共通電極間の電界を示す断面図、第
５図はこの考案の他の実施例の下部個別電極の拡
大平面図、第６図は従来の密着型イメージセンサ
の電極構造を示す平面図、第７図は第６図の―
線に沿う断面図、第８図は第７図の下部個別電
極、共通電極間の電界を示す断面図である。
１は絶縁基板、２は下部個別電極、２ｂは角部
、３は非晶質半導体、４は透明な共通電極である
。なお、図中、同一符号は同一、又は相当部分を
示す。
FIG. 1 is a plan view showing the electrode structure of a contact image sensor according to an embodiment of the invention, FIG. 2 is a sectional view taken along the line - in FIG. 1, and FIG. FIG. 4 is a cross-sectional view showing the electric field between the lower individual electrodes and the common electrode in FIG. 2, FIG. 5 is an enlarged plan view of the lower individual electrode of another embodiment of this invention, and FIG. A plan view showing the electrode structure of a conventional contact-type image sensor, Figure 7 is similar to Figure 6.
FIG. 8 is a cross-sectional view along the line showing the electric field between the lower individual electrodes and the common electrode in FIG. 1 is an insulating substrate, 2 is a lower individual electrode, 2b is a corner, 3 is an amorphous semiconductor, and 4 is a transparent common electrode. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
極と、前記下部個別電極に非晶質半導体を介して
積層された共通電極とを有する密着型イメージセ
ンサの電極構造において、前記下部個別電極の角
部の面取りを行なつたことを特徴とする密着型イ
メージセンサの電極構造。 In the electrode structure of a contact image sensor having a rectangular lower individual electrode formed on an insulating substrate and a common electrode laminated on the lower individual electrode via an amorphous semiconductor, the corners of the lower individual electrode An electrode structure for a contact image sensor characterized by having chamfered portions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17674486U JPS6382954U (en) | 1986-11-19 | 1986-11-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17674486U JPS6382954U (en) | 1986-11-19 | 1986-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6382954U true JPS6382954U (en) | 1988-05-31 |
Family
ID=31117286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17674486U Pending JPS6382954U (en) | 1986-11-19 | 1986-11-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6382954U (en) |
-
1986
- 1986-11-19 JP JP17674486U patent/JPS6382954U/ja active Pending