JPS6351271U - - Google Patents
Info
- Publication number
- JPS6351271U JPS6351271U JP14513586U JP14513586U JPS6351271U JP S6351271 U JPS6351271 U JP S6351271U JP 14513586 U JP14513586 U JP 14513586U JP 14513586 U JP14513586 U JP 14513586U JP S6351271 U JPS6351271 U JP S6351271U
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- spaced apart
- pair
- insulating substrate
- plate shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図は酸素センサの従来例を示す平面図、第３図は
第２図の―矢視図である。
１１…アルミナ基板、１２…酸化チタン層、１
５，１６…測定電極。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is a plan view showing a conventional example of an oxygen sensor, and FIG. 3 is a view taken along the - arrow in FIG. 11...Alumina substrate, 12...Titanium oxide layer, 1
5, 16...Measurement electrode.
Claims (1)
変化する酸化物半導体を、板状に配設すると共に
、該酸化物半導体の一側に一対の測定電極を所定
空隙を持つて離間させて配設したことを特徴とす
る酸素センサ。 An oxide semiconductor whose resistivity changes depending on the oxygen concentration is arranged in a plate shape on one side of an insulating substrate, and a pair of measurement electrodes are spaced apart with a predetermined gap on one side of the oxide semiconductor. An oxygen sensor characterized by being arranged with
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14513586U JPS6351271U (en) | 1986-09-24 | 1986-09-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14513586U JPS6351271U (en) | 1986-09-24 | 1986-09-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6351271U true JPS6351271U (en) | 1988-04-06 |
Family
ID=31056394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14513586U Pending JPS6351271U (en) | 1986-09-24 | 1986-09-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351271U (en) |
-
1986
- 1986-09-24 JP JP14513586U patent/JPS6351271U/ja active Pending