JPS6377154A - 電子用半導体素子 - Google Patents

電子用半導体素子

Info

Publication number
JPS6377154A
JPS6377154A JP62230896A JP23089687A JPS6377154A JP S6377154 A JPS6377154 A JP S6377154A JP 62230896 A JP62230896 A JP 62230896A JP 23089687 A JP23089687 A JP 23089687A JP S6377154 A JPS6377154 A JP S6377154A
Authority
JP
Japan
Prior art keywords
cathode
semiconductor device
power semiconductor
control
control zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62230896A
Other languages
English (en)
Japanese (ja)
Inventor
ブルーノ　ブロイッヒ
ホルシュト　グリューニンク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of JPS6377154A publication Critical patent/JPS6377154A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H10W20/484—
    • H10W90/00—
    • H10W72/07352—
    • H10W72/321—
    • H10W72/536—
    • H10W72/5445—
    • H10W72/5473—
    • H10W72/884—
    • H10W72/931—
    • H10W72/932—
    • H10W90/753—

Landscapes

  • Thyristors (AREA)
JP62230896A 1986-09-16 1987-09-14 電子用半導体素子 Pending JPS6377154A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH03707/86-5 1986-09-16
CH3707/86A CH670334A5 (enExample) 1986-09-16 1986-09-16

Publications (1)

Publication Number Publication Date
JPS6377154A true JPS6377154A (ja) 1988-04-07

Family

ID=4261789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230896A Pending JPS6377154A (ja) 1986-09-16 1987-09-14 電子用半導体素子

Country Status (4)

Country Link
US (1) US4862239A (enExample)
EP (1) EP0260471A1 (enExample)
JP (1) JPS6377154A (enExample)
CH (1) CH670334A5 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307235A (ja) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp 半導体装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2636488A1 (fr) * 1988-09-09 1990-03-16 Labo Electronique Physique Dispositif convertisseur de standards de television
EP0380799B1 (de) * 1989-02-02 1993-10-06 Asea Brown Boveri Ag Druckkontaktiertes Halbleiterbauelement
EP0469172B1 (de) * 1990-08-02 1995-01-25 Asea Brown Boveri Ag Viertelbrückenschaltung für grosse Ströme
JP2799252B2 (ja) * 1991-04-23 1998-09-17 三菱電機株式会社 Ｍｏｓ型半導体装置およびその製造方法
JP2810821B2 (ja) * 1992-03-30 1998-10-15 三菱電機株式会社 半導体装置及びその製造方法
US5841155A (en) * 1995-02-08 1998-11-24 Ngk Insulators, Ltd. Semiconductor device containing two joined substrates
US6414362B1 (en) * 2001-06-12 2002-07-02 Siliconx (Taiwan) Ltd. Power semiconductor device
EP1372197A1 (de) * 2002-06-10 2003-12-17 ABB Schweiz AG Leistungshalbleiter mit variierbaren Parametern
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
JP4762663B2 (ja) * 2005-10-14 2011-08-31 三菱電機株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2103146A1 (de) * 1970-01-26 1971-08-05 Westinghouse Electric Corp Mittels einer Gate Elektrode Steuer bares Schaltelement
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
JPS5929143B2 (ja) * 1978-01-07 1984-07-18 株式会社東芝 電力用半導体装置
JPS57181131A (en) * 1981-04-30 1982-11-08 Toshiba Corp Pressure-contact type semiconductor device
EP0064613B1 (en) * 1981-04-30 1986-10-29 Kabushiki Kaisha Toshiba Semiconductor device having a plurality of element units operable in parallel
DE3151141A1 (de) * 1981-12-23 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit hoher stossstrombelastbarkeit
JPS5986260A (ja) * 1982-11-10 1984-05-18 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
JPS59121871A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 半導体装置
DE3468787D1 (en) * 1983-03-31 1988-02-18 Bbc Brown Boveri & Cie Semiconductor power device and method of manufacture
CH668667A5 (de) * 1985-11-15 1989-01-13 Bbc Brown Boveri & Cie Leistungshalbleitermodul.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307235A (ja) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
EP0260471A1 (de) 1988-03-23
CH670334A5 (enExample) 1989-05-31
US4862239A (en) 1989-08-29

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