JPS6377154A - 電子用半導体素子 - Google Patents

電子用半導体素子

Info

Publication number
JPS6377154A
JPS6377154A JP62230896A JP23089687A JPS6377154A JP S6377154 A JPS6377154 A JP S6377154A JP 62230896 A JP62230896 A JP 62230896A JP 23089687 A JP23089687 A JP 23089687A JP S6377154 A JPS6377154 A JP S6377154A
Authority
JP
Japan
Prior art keywords
cathode
semiconductor device
power semiconductor
control
control zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62230896A
Other languages
English (en)
Japanese (ja)
Inventor
ブルーノ ブロイッヒ
ホルシュト グリューニンク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of JPS6377154A publication Critical patent/JPS6377154A/ja
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
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    • H01L25/18Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D18/60Gate-turn-off devices 
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    • H10D62/148Cathode regions of thyristors
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
JP62230896A 1986-09-16 1987-09-14 電子用半導体素子 Pending JPS6377154A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH3707/86A CH670334A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-09-16 1986-09-16
CH03707/86-5 1986-09-16

Publications (1)

Publication Number Publication Date
JPS6377154A true JPS6377154A (ja) 1988-04-07

Family

ID=4261789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230896A Pending JPS6377154A (ja) 1986-09-16 1987-09-14 電子用半導体素子

Country Status (4)

Country Link
US (1) US4862239A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0260471A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6377154A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH670334A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307235A (ja) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp 半導体装置

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FR2636488A1 (fr) * 1988-09-09 1990-03-16 Labo Electronique Physique Dispositif convertisseur de standards de television
EP0380799B1 (de) * 1989-02-02 1993-10-06 Asea Brown Boveri Ag Druckkontaktiertes Halbleiterbauelement
EP0469172B1 (de) * 1990-08-02 1995-01-25 Asea Brown Boveri Ag Viertelbrückenschaltung für grosse Ströme
JP2799252B2 (ja) * 1991-04-23 1998-09-17 三菱電機株式会社 Mos型半導体装置およびその製造方法
JP2810821B2 (ja) * 1992-03-30 1998-10-15 三菱電機株式会社 半導体装置及びその製造方法
US5841155A (en) * 1995-02-08 1998-11-24 Ngk Insulators, Ltd. Semiconductor device containing two joined substrates
US6414362B1 (en) * 2001-06-12 2002-07-02 Siliconx (Taiwan) Ltd. Power semiconductor device
EP1372197A1 (de) * 2002-06-10 2003-12-17 ABB Schweiz AG Leistungshalbleiter mit variierbaren Parametern
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
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US4862239A (en) 1989-08-29
EP0260471A1 (de) 1988-03-23

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