JPS6376872A - 膜の内部圧縮応力低減方法 - Google Patents
膜の内部圧縮応力低減方法Info
- Publication number
- JPS6376872A JPS6376872A JP21791486A JP21791486A JPS6376872A JP S6376872 A JPS6376872 A JP S6376872A JP 21791486 A JP21791486 A JP 21791486A JP 21791486 A JP21791486 A JP 21791486A JP S6376872 A JPS6376872 A JP S6376872A
- Authority
- JP
- Japan
- Prior art keywords
- film
- stress
- internal stress
- deposited
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 150000002500 ions Chemical class 0.000 claims abstract description 29
- 238000004544 sputter deposition Methods 0.000 claims abstract description 27
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- -1 tungsten nitride Chemical class 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000010884 ion-beam technique Methods 0.000 abstract description 5
- 230000035882 stress Effects 0.000 description 68
- 238000000151 deposition Methods 0.000 description 28
- 230000008021 deposition Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000001552 radio frequency sputter deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21791486A JPS6376872A (ja) | 1986-09-18 | 1986-09-18 | 膜の内部圧縮応力低減方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21791486A JPS6376872A (ja) | 1986-09-18 | 1986-09-18 | 膜の内部圧縮応力低減方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62162670A Division JPS6376325A (ja) | 1987-06-30 | 1987-06-30 | Ｘ線リソグラフィ−用マスクのｘ線吸収体膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6376872A true JPS6376872A (ja) | 1988-04-07 |
| JPH049866B2 JPH049866B2 (enrdf_load_stackoverflow) | 1992-02-21 |
Family
ID=16711721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21791486A Granted JPS6376872A (ja) | 1986-09-18 | 1986-09-18 | 膜の内部圧縮応力低減方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6376872A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
| JPH0757739A (ja) * | 1993-08-09 | 1995-03-03 | Agency Of Ind Science & Technol | 高温型燃料電池用燃料電極の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5466767A (en) * | 1977-11-08 | 1979-05-29 | Fujitsu Ltd | Manufacture for sos construction |
-
1986
- 1986-09-18 JP JP21791486A patent/JPS6376872A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5466767A (en) * | 1977-11-08 | 1979-05-29 | Fujitsu Ltd | Manufacture for sos construction |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
| US5773177A (en) * | 1989-03-09 | 1998-06-30 | Canon Kabushiki Kaisha | X-ray mask structure, and X-ray exposure process |
| JPH0757739A (ja) * | 1993-08-09 | 1995-03-03 | Agency Of Ind Science & Technol | 高温型燃料電池用燃料電極の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH049866B2 (enrdf_load_stackoverflow) | 1992-02-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |