JPS6373554A - デジタル信号記憶装置 - Google Patents

デジタル信号記憶装置

Info

Publication number
JPS6373554A
JPS6373554A JP62218110A JP21811087A JPS6373554A JP S6373554 A JPS6373554 A JP S6373554A JP 62218110 A JP62218110 A JP 62218110A JP 21811087 A JP21811087 A JP 21811087A JP S6373554 A JPS6373554 A JP S6373554A
Authority
JP
Japan
Prior art keywords
storage device
thin film
memory element
membrane
positions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62218110A
Other languages
English (en)
Japanese (ja)
Inventor
ラディフォエ・ポポヴィック
カタリン・ゾルト
ハインツ・リーンハルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Building Technologies AG
Landis and Gyr AG
Original Assignee
Landis and Gyr AG
LGZ Landis and Gyr Zug AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Landis and Gyr AG, LGZ Landis and Gyr Zug AG filed Critical Landis and Gyr AG
Publication of JPS6373554A publication Critical patent/JPS6373554A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
  • Credit Cards Or The Like (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
JP62218110A 1986-09-10 1987-09-02 デジタル信号記憶装置 Pending JPS6373554A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH3647/86A CH670914A5 (US20020130353A1-20020919-M00001.png) 1986-09-10 1986-09-10
CH03647/86-2 1986-09-10

Publications (1)

Publication Number Publication Date
JPS6373554A true JPS6373554A (ja) 1988-04-04

Family

ID=4260485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62218110A Pending JPS6373554A (ja) 1986-09-10 1987-09-02 デジタル信号記憶装置

Country Status (8)

Country Link
US (1) US4979149A (US20020130353A1-20020919-M00001.png)
EP (1) EP0259614B1 (US20020130353A1-20020919-M00001.png)
JP (1) JPS6373554A (US20020130353A1-20020919-M00001.png)
AT (1) ATE72075T1 (US20020130353A1-20020919-M00001.png)
CH (1) CH670914A5 (US20020130353A1-20020919-M00001.png)
DE (1) DE3776237D1 (US20020130353A1-20020919-M00001.png)
GR (1) GR3004073T3 (US20020130353A1-20020919-M00001.png)
NO (1) NO873761L (US20020130353A1-20020919-M00001.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036201A (ja) * 2005-06-22 2007-02-08 Matsushita Electric Ind Co Ltd 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
JP2008288426A (ja) * 2007-05-18 2008-11-27 Nippon Telegr & Teleph Corp <Ntt> 記憶素子

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US5538753A (en) * 1991-10-14 1996-07-23 Landis & Gyr Betriebs Ag Security element
EP0537439B2 (de) * 1991-10-14 2003-07-09 OVD Kinegram AG Sicherheitselement
GB9309327D0 (en) * 1993-05-06 1993-06-23 Smith Charles G Bi-stable memory element
US6100109A (en) * 1994-11-02 2000-08-08 Siemens Aktiengesellschaft Method for producing a memory device
ATE209818T1 (de) * 1995-08-09 2001-12-15 Infineon Technologies Ag Speichervorrichtung und herstellungsverfahren
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
US6168395B1 (en) 1996-02-10 2001-01-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Bistable microactuator with coupled membranes
US6237590B1 (en) 1997-09-18 2001-05-29 Delsys Pharmaceutical Corporation Dry powder delivery system apparatus
US6188301B1 (en) * 1998-11-13 2001-02-13 General Electric Company Switching structure and method of fabrication
KR100611240B1 (ko) * 1998-12-22 2006-08-10 코닌클리케 필립스 일렉트로닉스 엔.브이. 이전에 인가된 전극 전압에 의존하는 전극 전압을 갖는 광 유도부를 포함하는 디스플레이 장치
US6211580B1 (en) * 1998-12-29 2001-04-03 Honeywell International Inc. Twin configuration for increased life time in touch mode electrostatic actuators
US6054745A (en) * 1999-01-04 2000-04-25 International Business Machines Corporation Nonvolatile memory cell using microelectromechanical device
JP2002539624A (ja) * 1999-03-18 2002-11-19 キャベンディッシュ・キネティックス・リミテッド フレキシブル要素を有するフラッシュメモリ素子、フラッシュメモリデバイスおよび情報電荷蓄積方法
JP2003504857A (ja) * 1999-07-02 2003-02-04 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ ナノスコピックワイヤを用いる装置、アレイおよびその製造方法
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CN100490044C (zh) * 2002-07-26 2009-05-20 松下电器产业株式会社 开关
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JP2007502545A (ja) 2003-08-13 2007-02-08 ナンテロ，インク． 複数の制御装置を有するナノチューブを基礎とする交換エレメントと上記エレメントから製造される回路
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WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7215229B2 (en) * 2003-09-17 2007-05-08 Schneider Electric Industries Sas Laminated relays with multiple flexible contacts
JP4626142B2 (ja) * 2003-11-18 2011-02-02 株式会社日立製作所 装置およびそれを用いたデータ処理方法
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
EP1751765A4 (en) * 2004-05-24 2009-05-20 Univ Boston CONTROLLABLE NANOCHEMICAL MEMORY ELEMENT
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7288970B2 (en) 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
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US7329931B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
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WO2006121461A2 (en) 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
ATE463034T1 (de) 2004-09-22 2010-04-15 Nantero Inc Direktzugriffsspeicher mit nanoröhrenschaltelementen
WO2006040726A1 (en) * 2004-10-15 2006-04-20 Koninklijke Philips Electronics N.V. Method of operating a rfid system
US7046539B1 (en) 2004-11-02 2006-05-16 Sandia Corporation Mechanical memory
US8362525B2 (en) 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
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US7579618B2 (en) 2005-03-02 2009-08-25 Northrop Grumman Corporation Carbon nanotube resonator transistor and method of making same
US8217490B2 (en) 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
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JP2007036201A (ja) * 2005-06-22 2007-02-08 Matsushita Electric Ind Co Ltd 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
JP2008288426A (ja) * 2007-05-18 2008-11-27 Nippon Telegr & Teleph Corp <Ntt> 記憶素子

Also Published As

Publication number Publication date
NO873761D0 (no) 1987-09-09
CH670914A5 (US20020130353A1-20020919-M00001.png) 1989-07-14
GR3004073T3 (US20020130353A1-20020919-M00001.png) 1993-03-31
DE3776237D1 (de) 1992-03-05
US4979149A (en) 1990-12-18
NO873761L (no) 1988-03-11
ATE72075T1 (de) 1992-02-15
EP0259614B1 (de) 1992-01-22
EP0259614A1 (de) 1988-03-16

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