JPS637022B2 - - Google Patents
Info
- Publication number
- JPS637022B2 JPS637022B2 JP3506680A JP3506680A JPS637022B2 JP S637022 B2 JPS637022 B2 JP S637022B2 JP 3506680 A JP3506680 A JP 3506680A JP 3506680 A JP3506680 A JP 3506680A JP S637022 B2 JPS637022 B2 JP S637022B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- compound semiconductor
- semiconductor crystal
- crystal
- laser annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000005224 laser annealing Methods 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 InP crystal Chemical compound 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3506680A JPS56131934A (en) | 1980-03-19 | 1980-03-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3506680A JPS56131934A (en) | 1980-03-19 | 1980-03-19 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56131934A JPS56131934A (en) | 1981-10-15 |
| JPS637022B2 true JPS637022B2 (nl) | 1988-02-15 |
Family
ID=12431639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3506680A Granted JPS56131934A (en) | 1980-03-19 | 1980-03-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56131934A (nl) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873112A (ja) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | レ−ザアニ−ル方法 |
| JP2582741B2 (ja) * | 1991-11-07 | 1997-02-19 | 株式会社日本製鋼所 | エピタキシャル薄膜の形成方法 |
| JP5099576B2 (ja) * | 2006-02-23 | 2012-12-19 | 株式会社Ｉｈｉ | 化合物半導体の活性化方法及び装置 |
| JP5210549B2 (ja) * | 2007-05-31 | 2013-06-12 | 株式会社半導体エネルギー研究所 | レーザアニール方法 |
| JP2018022712A (ja) * | 2014-12-10 | 2018-02-08 | 東京エレクトロン株式会社 | 微細構造形成方法、半導体デバイスの製造方法、及びｃｍｏｓの形成方法 |
-
1980
- 1980-03-19 JP JP3506680A patent/JPS56131934A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56131934A (en) | 1981-10-15 |
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