JPS6364903B2 - - Google Patents
Info
- Publication number
- JPS6364903B2 JPS6364903B2 JP57039644A JP3964482A JPS6364903B2 JP S6364903 B2 JPS6364903 B2 JP S6364903B2 JP 57039644 A JP57039644 A JP 57039644A JP 3964482 A JP3964482 A JP 3964482A JP S6364903 B2 JPS6364903 B2 JP S6364903B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- sample
- mocl
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/60—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039644A JPS58157139A (ja) | 1982-03-12 | 1982-03-12 | 窒化モリブデン膜の気相成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039644A JPS58157139A (ja) | 1982-03-12 | 1982-03-12 | 窒化モリブデン膜の気相成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157139A JPS58157139A (ja) | 1983-09-19 |
| JPS6364903B2 true JPS6364903B2 (OSRAM) | 1988-12-14 |
Family
ID=12558788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57039644A Granted JPS58157139A (ja) | 1982-03-12 | 1982-03-12 | 窒化モリブデン膜の気相成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157139A (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60251274A (ja) * | 1984-05-28 | 1985-12-11 | Toyota Central Res & Dev Lab Inc | 窒化物被覆方法 |
| JP2541657B2 (ja) * | 1988-04-20 | 1996-10-09 | 富士通株式会社 | 拡散障壁構造及びその製造方法 |
| CN100391606C (zh) * | 2005-06-29 | 2008-06-04 | 中国科学院金属研究所 | 一种制备金属氮化物催化材料的专用设备 |
| CN100457270C (zh) * | 2005-11-14 | 2009-02-04 | 中国科学院金属研究所 | 一种用于制备金属氮化物催化材料的设备及方法 |
-
1982
- 1982-03-12 JP JP57039644A patent/JPS58157139A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58157139A (ja) | 1983-09-19 |
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